US2008124238A1PendingUtilityA1
Metal Thin Film-Forming Method And Metal Thin Film
Est. expiryDec 20, 2024(expired)· nominal 20-yr term from priority
H01B 5/14C23C 24/08B22F 9/12H01B 13/00H05K 2203/1126C23C 26/00H05K 2203/122H05K 1/097B22F 2998/00H05K 3/1291
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Claims
Abstract
A metal thin film-forming method which comprises the step of firing metal nanoparticles each comprising a particle consisting of at least one metal selected from Ag, Au, Ni, Pd, Rh, Ru, and Pt or an alloy comprising at least two of these metals and an organic substance adhered to the periphery thereof as a dispersant, under a gas atmosphere containing water and/or an organic acid to thus form a metal thin film. This metal thin film possesses a low resistance value.
Claims
exact text as granted — not AI-modified1 . A metal thin film-forming method which comprises firing metal nanoparticles each comprising a particle consisting of at least one metal selected from the group consisting of Ag, Au, Ni, Pd, Rh, Ru, and Pt or an alloy comprising at least two of these metals and an organic substance adhered to the periphery of the metal or alloy as a dispersant, wherein the firing step is carried out under a gas atmosphere containing water or an organic acid, or both water and an organic acid.
2 . The metal thin film-forming method as set forth in claim 1 , wherein the organic acid is a saturated fatty acid or an unsaturated fatty acid having not more than 4 carbon atoms.
3 . A metal thin film characterized in that it is formed according to the metal thin film-forming method as set forth in claim 1 .
4 . A metal thin film characterized in that it is formed according to the metal thin film-forming method as set forth in claim 3 .Join the waitlist — get patent alerts
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