Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manufacturing method of liquid crystal display apparatus

Abstract

A manufacturing method of a thin film transistor of the present invention includes the steps of (i) forming an electrode formation area in which a source electrode and a drain electrode are formed by applying a droplet of an electrode raw material, (ii) applying the droplet of the electrode raw material on drop-on positions located off a forming area of a semiconductor layer and in the electrode formation area, and (iii) forming the source electrode and the drain electrode in the electrode formation area. With this arrangement, it is possible to surely prevent adherence of a splash droplet on a channel section between each electrode, in forming the source electrode and the drain electrode by applying the droplet of the electrode raw material.

1 . A thin film transistor comprising (i) a semiconductor layer, which faces a gate electrode via a gate insulation layer, (ii) a source electrode and a drain electrode, which are electrically connected with the semiconductor layer, and (iii) a channel section between the source electrode and the drain electrode, wherein:
 the source electrode is continuous with a source wire via a source transition part, and the drain electrode is continuous with a drain wire via a drain transition part; and   the source transition part and the drain transition part are located off a forming area of the semiconductor layer; and   the source transition part gets wider gradually from the source wire toward the forming area of the semiconductor layer, and/or the drain transition part gets wider gradually from the drain wire toward the forming area of the semiconductor layer.   
   
   
       2 . A liquid crystal display apparatus comprising a thin film transistor including (i) a semiconductor layer, which faces a gate electrode via a gate insulation layer, (ii) a source electrode and a drain electrode, which are electrically connected with the semiconductor layer, and (iii) a channel section between the source electrode and the drain electrode, wherein:
 the source electrode is continuous with a source wire via a source transition part, and the drain electrode is continuous with a drain wire via a drain transition part;   the source transition part and the drain transition part are located off a forming area of the semiconductor layer; and   the source transition part gets wider gradually from the source wire toward the forming area of the semiconductor layer, and/or the drain transition part gets wider gradually from the drain wire toward the forming area of the semiconductor layer.