US2008132060A1PendingUtilityA1

Contact barrier layer deposition process

52
Assignee: MACRONIX INT CO LTDPriority: Nov 30, 2006Filed: Nov 30, 2006Published: Jun 5, 2008
Est. expiryNov 30, 2026(~0.3 yrs left)· nominal 20-yr term from priority
Inventors:Tuung LuohChin-Ta SuTa-Hung YangKuang-Chao Chen
H10P 14/44H10P 14/43H10W 20/032
52
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Claims

Abstract

A method for depositing a barrier layer onto a substrate is disclosed. A layer of titanium (Ti) is deposited onto the substrate using an ionized metal plasma physical vapor deposition process, wherein the layer of Ti has a thickness of between about 10 angstroms (Å) and about 1000 Å. A first layer of titanium nitride (TiN) is deposited onto the layer of Ti using a metal organic chemical vapor deposition process, wherein the first layer of TiN has a thickness of between about 1 Å and about 100 Å. A second layer of TiN is deposited onto the first layer of TiN using a thermal chemical vapor deposition process, wherein the second layer of TiN has a thickness of between about 10 Å and about 750 Å.

Claims

exact text as granted — not AI-modified
1 . A method for depositing a barrier layer onto a substrate, comprising:
 depositing a layer of titanium (Ti) onto the substrate using an ionized metal plasma (IMP) physical vapor deposition process, wherein the IMP physical vapor deposition process includes,
 generating gaseous ions, 
 accelerating the gaseous ions towards a titanium target, 
 sputtering titanium atoms from the titanium target using the gaseous ions, 
 ionizing the titanium atoms using a plasma, and 
 depositing the ionized titanium atoms onto the substrate to form the layer of Ti; 
   depositing a first layer of titanium nitride (TiN) onto the layer of Ti using a metal organic chemical vapor deposition (MOCVD) process; and   depositing a second layer of TiN onto the first layer of TiN using a thermal chemical vapor deposition (CVD) process.   
   
   
       2 . The method for depositing a barrier layer onto a substrate, as recited in  claim 1 , wherein the gaseous ions is argon. 
   
   
       3 . The method for depositing a barrier layer onto a substrate, as recited in  claim 1 , wherein the gaseous ions is helium. 
   
   
       4 . The method for depositing a barrier layer onto a substrate, as recited in  claim 1 , wherein the layer of Ti has a thickness of between about 100 Å and about 450 Å. 
   
   
       5 . The method for depositing a barrier layer onto a substrate, as recited in  claim 1 , wherein the first layer of TiN has a thickness of between about 5 angstroms (Å) and about 50 Å. 
   
   
       6 . The method for depositing a barrier layer onto a substrate, as recited in  claim 1 , wherein the second layer of TiN has a thickness of between about 50 Å and about 300 Å. 
   
   
       7 . The method for depositing a barrier layer onto a substrate, as recited in  claim 1 , wherein the plasma is generated by a radio frequency (RF) plasma source. 
   
   
       8 . The method for depositing a barrier layer onto a substrate, as recited in  claim 7 , wherein the RF plasma source is operated using a power setting of between about 2000 Watts (W) and about 4000 W. 
   
   
       9 . The method for depositing a barrier layer onto a substrate, as recited in  claim 1 , wherein the plasma is generated by an inductively coupled plasma source. 
   
   
       10 . The method for depositing a barrier layer onto a substrate, as recited in  claim 9 , wherein the inductively coupled plasma source is operated using a power setting of between about 2000 W and about 4000 W. 
   
   
       11 . The method for depositing a barrier layer onto a substrate, as recited in  claim 1 , wherein the IMP physical vapor deposition process occurs under a temperature setting of between about 100 degrees Celcius (° C.) and about 200° C. 
   
   
       12 . A method for depositing a barrier layer onto a substrate, comprising:
 depositing a layer of titanium (Ti) onto the substrate using an ionized metal plasma (IMP) physical vapor deposition process;   depositing a first layer of titanium nitride (TiN) onto the layer of Ti using a metal organic chemical vapor deposition (MOCVD) process, wherein the MOCVD process includes,
 supplying a gaseous metal organic precursor compound and ammonia (NH 3 ) to a reaction chamber holding the substrate, 
 reacting the gaseous metal organic precursor compound with ammonia (NH 3 ) to produce TiN, 
 depositing TiN onto the layer of Ti to form the first layer of TiN, and 
 supplying a gas mixture and a quantity of plasma to the reaction chamber to remove impurities from the first layer of TiN; and 
   depositing a second layer of TiN onto the first layer of TiN using a thermal chemical vapor deposition (CVD) process.   
   
   
       13 . The method for depositing a barrier layer onto a substrate, as recited in  claim 12 , wherein the layer of Ti has a thickness of between about 100 Å and about 450 Å. 
   
   
       14 . The method for depositing a barrier layer onto a substrate, as recited in  claim 12 , wherein the first layer of TiN has a thickness of between about 5 Å and about 50 Å. 
   
   
       15 . The method for depositing a barrier layer onto a substrate, as recited in  claim 12 , wherein the second layer of TiN has a thickness of between about 50 Å and about 300 Å. 
   
   
       16 . The method for depositing a barrier layer onto a substrate, as recited in  claim 12 , wherein the quantity of plasma is generated using a radio frequency (RF) plasma source. 
   
   
       17 . The method for depositing a barrier layer onto a substrate, as recited in  claim 16 , wherein the RF plasma source is operated using a power setting about 750 W. 
   
   
       18 . The method for depositing a barrier layer onto a substrate, as recited in  claim 12 , wherein the gaseous metal organic precursor compound is Tetrakis Dimethylamino Titanium (TDMAT). 
   
   
       19 . The method for depositing a barrier layer onto a substrate, as recited in  claim 12 , wherein the gaseous metal organic precursor compound is Tetrakis Diethylamido Titanium (TDEAT). 
   
   
       20 . The method for depositing a barrier layer onto a substrate, as recited in  claim 12 , wherein the MOCVD process occurs under a temperature setting of between about 350° C. and about 450° C. 
   
   
       21 . The method for depositing a barrier layer onto a substrate, as recited in  claim 12 , wherein the gas mixture includes nitrogen (N 2 ) gas and hydrogen (H 2 ) gas. 
   
   
       22 . A method for depositing a barrier layer onto a substrate, comprising:
 depositing a layer of titanium (Ti) onto the substrate using an ionized metal plasma (IMP) physical vapor deposition process;   depositing a first layer of titanium nitride (TiN) onto the layer of Ti using a metal organic chemical vapor deposition (MOCVD) process; and   depositing a second layer of TiN onto the first layer of TiN using a thermal chemical vapor deposition process, wherein the thermal chemical vapor deposition (CVD) process includes,
 supplying titanium tetrachloride (TiCl 4 ) gas and ammonia (NH 3 ) to a reaction chamber holding the substrate, 
 heating the reaction chamber to a set temperature, 
 reacting TiCl 4  with NH 3  to produce TiN, and 
 depositing TiN onto the first layer of TiN to form the second layer of TiN. 
   
   
   
       23 . The method for depositing a barrier layer onto a substrate, as recited in  claim 22 , wherein the layer of Ti has a thickness of between about 100 Å and about 450 Å. 
   
   
       24 . The method for depositing a barrier layer onto a substrate, as recited in  claim 22 , wherein the first layer of TiN has a thickness of between about 5 Å and about 50 Å. 
   
   
       25 . The method for depositing a barrier layer onto a substrate, as recited in  claim 22 , wherein the second layer of TiN has a thickness of between about 50 Å and about 300 Å. 
   
   
       26 . The method for depositing a barrier layer onto a substrate, as recited in  claim 22 , wherein the set temperature is between about 550° C. and about 700° C. 
   
   
       27 . A system for depositing a barrier layer onto a substrate, comprising:
 an ionized metal plasma (IMP) chamber configured to deposit a layer of Ti onto the substrate;   a metal organic chemical vapor deposition (MOCVD) chamber operatively interfaced with the IMP chamber and configured to deposit a first layer of TiN onto the layer of Ti; and   a thermal chemical vapor deposition (CVD) chamber operatively interfaced with the MOCVD chamber and configured to deposit a second layer of TiN onto the first layer of TiN.   
   
   
       28 . The system for depositing a barrier layer onto a substrate, as recited in  claim 27 , wherein the layer of Ti has a thickness of between about 100 Å and about 450 Å. 
   
   
       29 . The system for depositing a barrier layer onto a substrate, as recited in  claim 27 , wherein the first layer of TiN has a thickness of between about 5 angstroms Å and about 50 Å. 
   
   
       30 . The system for depositing a barrier layer onto a substrate, as recited in  claim 27 , wherein the second layer of TiN has a thickness of between about 50 Å and about 300 Å. 
   
   
       31 . The system for depositing a barrier layer onto a substrate, as recited in  claim 27 , wherein the ionized metal plasma chamber operates under a temperature setting of between about 100° C. and about 200° C. 
   
   
       32 . The system for depositing a barrier layer onto a substrate, as recited in  claim 27 , wherein the MOCVD chamber operates under a temperature setting of between about 350° C. and about 450° C. 
   
   
       33 . The system for depositing a barrier layer onto a substrate, as recited in  claim 27 , wherein the thermal chemical vapor deposition chamber operates under a temperature setting of between about 550° C. and about 700° C. 
   
   
       34 . A method for depositing a barrier layer onto a substrate, comprising:
 depositing a layer of titanium (Ti) onto the substrate using an ionized metal plasma (IMP) physical vapor deposition process, wherein the layer of Ti has a thickness of between about 10 Å and about 1000 Å;   depositing a first layer of titanium nitride (TiN) onto the layer of Ti using a metal organic chemical vapor deposition (MOCVD) process, wherein the first layer of TiN has a thickness of between about 1 Å and about 100 Å; and   depositing a second layer of TiN onto the first layer of TiN using a thermal chemical vapor deposition process, wherein the second layer of TiN has a thickness of between about 10 Å and about 750 Å.

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