US2008135785A1PendingUtilityA1

Method of and apparatus for manufacturing semiconductor thin film, and method of manufacturing thin film transistor

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Assignee: TAKAOKA HIROMICHIPriority: May 30, 2003Filed: Jan 7, 2008Published: Jun 12, 2008
Est. expiryMay 30, 2023(expired)· nominal 20-yr term from priority
H10P 14/3812H10P 14/3411H10P 14/3238H10P 14/2922H10P 14/382H10P 14/381H10P 14/3816H10D 30/0321H10D 30/6745H10D 30/6731H10D 30/0314C30B 13/24
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Claims

Abstract

A method of manufacturing a semiconductor thin film includes (A) forming an amorphous semiconductor film on a substrate, (B) irradiating a beam to a surface of the amorphous semiconductor film such that a predetermined region of the amorphous semiconductor film is melted and solidified to form a crystallized semiconductor film, and (C) scanning the beam in a first direction. A second direction is a direction on the surface of the amorphous semiconductor film perpendicular to the first direction. A length along the second direction of a cross section of the beam is substantially equal to or less than two times a width along the second direction of the crystallized semiconductor film.

Claims

exact text as granted — not AI-modified
1 - 18 . (canceled) 
   
   
       19 . An apparatus for manufacturing a semiconductor thin film comprising:
 a laser oscillator configured for generating a beam;   a stage on which a substrate is placed;   a mask provided on a light path of said beam and having a plurality of aperture sections through which said beam from said laser oscillator is irradiated to a surface of said substrate;   a means for scanning said beam in a first direction;   wherein a second direction is a direction on said surface of said substrate perpendicular to said first direction,   wherein a length along said second direction of a cross section of said beam on said surface, as a beam length, is substantially equal to or less than two times a width along said second direction of a crystal to be formed on said substrate, as a crystal growth width.   
   
   
       20 . The apparatus according to  claim 19 ,
 wherein said beam length is substantially equal to or less than said crystal growth.   
   
   
       21 . The apparatus according to  claim 19 ,
 wherein said plurality of aperture sections are arranged along said second direction.   
   
   
       22 . The apparatus according to  claim 19 ,
 wherein each of said plurality of aperture sections belongs to any one of a plurality of aperture groups, and each of said plurality of aperture groups includes a predetermined number of said aperture sections,   wherein said plurality of aperture groups are arranged in said first direction,   wherein said predetermined number of aperture sections belonging to said each aperture group are arranged along said second direction.   
   
   
       23 . The apparatus according to  claim 22 ,
 wherein one of said plurality of aperture groups includes a first aperture section, and another of said plurality of aperture groups includes a second aperture section,   wherein a part of said first aperture section overlaps with a part of said second aperture section along said first direction.   
   
   
       24 . (canceled)

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