US2008135826A1PendingUtilityA1
Controlled nanowire in permanent integrated nano-templates and method of fabricating sensor and transducer structures
Est. expiryDec 11, 2023(expired)· nominal 20-yr term from priority
Inventors:Stephen J. FonashYinghui ShanChih-Yi PengAli Kaan KalkanJoseph CuiffiDaniel HayesPaul ButterfossWook Jun Nam
H10P 14/3462H10P 14/3452H10P 14/3411H10P 14/2901H10P 14/279H10P 14/274H10P 14/271H10D 62/123H10D 62/121H10D 62/118H10K 71/10B82Y 10/00Y10S977/762Y02E10/549B81B 2203/0118B81B 2203/0109B81C 1/0019
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Claims
Abstract
This invention presents a novel method to form uniform or heterogeneous, straight or curved and size-controllable nanostructures including, for example, nanotubes, nanowires, nanoribbons, and nanotapes, including SiNW, using a nanochannel template. In the case of semiconductor nanowires, doping can be included during growth. Electrode contacts are present as needed and may be built in to the template structure. Thus completed devices such as diodes, transistors, solar cells, sensors, and transducers are fabricated, contacted, and arrayed as nanowire or nanotape fabrication is completed. Optionally, the template is not removed and may become part of the structure. Nanodevices such as nanotweezers, nanocantilevers, and nanobridges are formed utilizing the processes of the invention.
Claims
exact text as granted — not AI-modified1 . A device, comprising:
a substrate; at least one semiconductor nanostructure formed in a nanochannel template on the substrate, and an electrical contact formed to the at least one nanostructure.
2 . The device of claim 1 , wherein the nanostructure is a nanowire, nanotape, nanoribbon, or nanotube.
3 . The device of claim 1 , wherein the semiconductor comprises silicon.
4 . The device of claim 1 , wherein the nanostructure is an interconnect.
5 . The device of claim 1 , wherein the nanostructure is an electronic device.
6 . The device of claim 5 , wherein the electronic device is a resistor.
7 . The device of claim 5 , wherein the electronic device is a diode.
8 . The device of claim 5 , wherein the electronic device is a transistor.
9 . The device of claim 8 , wherein the transistor is an insulated gate field effect transistor (IGFET).
10 . The device of claim 1 , wherein the nanostructure is an optoelectronic device.
11 . The device of claim 10 , wherein the optoelectronic device is a light emitting device.
12 . The device of claim 10 , wherein the optoelectronic device is a solar cell device.
13 . The device of claim 1 , wherein the nanostructure is a sensor device.
14 . The device of claim 1 , wherein the nanostructure is used in a nanoprobe, nanotweezer, nanocantiliver, or nanobridge.
15 . The device of claim 1 , wherein the at least one nanostructure includes a plurality of nanowires, nanotapes, nanoribbons, nanotubes, or some combination thereof arranged in an array.
16 . The device of claim 15 , wherein the array is used in a display.
17 . The device of claim 15 , wherein the array is used in a sensor array.
18 . A device, comprising:
a substrate; an insulator layer formed on the substrate; at least one semiconductor nanostructure formed on the substrate using a permanent template; at least one doped region formed in the at least one nanostructure and at least one electrical contact formed to the at least one nanostructure.
19 . The device of claim 18 , wherein the nanostructure is a nanowire, nanotape, nanoribbon, or nanotube.
20 . The device of claim 18 , wherein the semiconductor comprises silicon.
21 . The device of claim 18 , wherein the nanostructure is an interconnect.
22 . The device of claim 18 , wherein the nanostructure is an electronic device.
23 . The device of claim 22 , wherein the electronic device is a resistor.
24 . The device of claim 22 , wherein the electronic device is a diode.
25 . The device of claim 22 , wherein the electronic device is a transistor.
26 . The device of claim 25 , wherein the transistor is an insulated gate field effect transistor (IGFET).
27 . The device of claim 22 , wherein the electronic device is a sensor device.
28 . The device of claim 18 , wherein the nanostructure is an optoelectronic device.
29 . The device of claim 28 , wherein the optoelectronic device is a light emitting device.
30 . The device of claim 28 , wherein the optoelectronic device is a solar cell device.
31 . The device of claim 18 , wherein the nanostructure is used in a nanoprobe, nanotweezer, nanocantiliver, or nanobridge.
32 . The device of claim 18 , wherein the at least one semiconductor nanostructure includes a plurality of nanowires, nanotapes, nanoribbons, nanotubes, or some combination thereof arranged in an array.
33 . The device of claim 32 , wherein the array is used in a display.
34 . The device of claim 32 , wherein the array is used in a sensor array.
35 . A device, comprising:
a substrate; a capping layer containing at least one nanochannel arranged on the substrate; at least one nanostructure grown using the at least one nanochannel and electrically coupled to electrical contacts; and a region where a portion of the nanostructure has grown out of the capping layer and is in the adjacent substrate region.
36 . The device of claim 35 , wherein the portion of the nanostructure that has grown out of the capping layer and is in the adjacent substrate region is located above the substrate.
37 . The device of claim 35 , wherein the portion of the nanostructure that has grown out of the capping layer and is in the adjacent substrate region is located on the substrate.
38 . The device of claim 35 , wherein the nanostructure is a nanowire, nanotape, nanoribbon, or nanotube.
39 . The device of claim 35 , wherein the semiconductor comprises silicon.
40 . The device of claim 35 , wherein the nanostructure is an interconnect.
41 . The device of claim 35 , wherein the nanostructure is an electronic device.
42 . The device of claim 41 , wherein the electronic device is a resistor.
43 . The device of claim 41 , wherein the electronic device is a diode.
44 . The device of claim 41 , wherein the electronic device is a transistor.
45 . The device of claim 44 , wherein the transistor is an insulated gate field effect transistor (IGFET).
46 . The device of claim 35 , wherein the nanostructure is an optoelectronic device.
47 . The device of claim 46 , wherein the optoelectronic device is a light emitting device.
48 . The device of claim 46 , wherein the optoelectronic device is a solar cell device.
49 . The device of claim 35 , wherein the nanostructure is a sensor device.
50 . The device of claim 35 , wherein the nanostructure is used in a nanoprobe, nanotweezer, nanocantiliver, or nanobridge.
51 . The device of claim 35 , wherein the at least one nanostructure includes a plurality of nanowires, nanotapes, nanoribbons, nanotubes, or some combination thereof arranged in an array.
52 . The device of claim 51 , wherein the array is used in a display.
53 . The device of claim 51 , wherein the array is used in a sensor array.
54 . The device of claim 35 , wherein the nanostructure is a nanowire having a width of about 20 nm and a height of about 20 nm.
55 . A device, comprising:
a substrate; a capping layer containing at least one nanochannel and arranged on the substrate; and at least one nanostructure grown using the at least one nanochannel and electrically coupled to at least one electrical contact, wherein the nanostructure is grown within the capping layer region.
56 . The device of claim 55 , wherein the nanostructure is a nanowire, nanotape, nanoribbon, or nanotube.
57 . The device of claim 55 , wherein the semiconductor comprises silicon.
58 . The device of claim 55 , wherein the nanostructure is an interconnect.
59 . The device of claim 55 , wherein the nanostructure is an electronic device.
60 . The device of claim 59 , wherein the electronic device is a resistor.
61 . The device of claim 59 , wherein the electronic device is a diode.
62 . The device of claim 59 , wherein the electronic device is a transistor.
63 . The device of claim 62 , wherein the transistor is an insulated gate field effect transistor (IGFET).
64 . The device of claim 55 , wherein the nanostructure is an optoelectronic device.
65 . The device of claim 64 , wherein the optoelectronic device is a light emitting device.
66 . The device of claim 64 , wherein the optoelectronic device is a solar cell device.
67 . The device of claim 55 , wherein the nanostructure is a sensor device.
68 . The device of claim 55 , wherein the nanostructure is used in a nanoprobe, nanotweezer, nanocantiliver, or nanobridge.
69 . The device of claim 55 , wherein the at least one nanostructure includes a plurality of nanowires, nanotapes, nanoribbons, nanotubes, or some combination thereof arranged in an array.
70 . The device of claim 69 , wherein the array is used in a display.
71 . The device of claim 69 , wherein the array is used in a sensor array.
72 . A device comprising:
a substrate; a capping layer containing at least one nanochannel, the capping layer being arranged on the substrate; and at least one nanostructure grown within the capping layer region using the at least one nanochannel, wherein at least some portion of the capping layer is removed after growth to expose the nanostructure for device fabrication.
73 . The device of claim 72 , wherein the nanostructure is a nanowire, nanotape, nanoribbon, or nanotube.
74 . The device of claim 72 , wherein the semiconductor comprises silicon.
75 . The device of claim 72 , wherein the nanostructure is an interconnect.
76 . The device of claim 72 , wherein the nanostructure is an electronic device.
77 . The device of claim 76 , wherein the electronic device is a resistor.
78 . The device of claim 76 , wherein the electronic device is a diode.
79 . The device of claim 76 , wherein the electronic device is a transistor.
80 . The device of claim 79 , wherein the transistor is an insulated gate field effect transistor (IGFET).
81 . The device of claim 72 , wherein the nanostructure is an optoelectronic device.
82 . The device of claim 81 , wherein the optoelectronic device is a light emitting device.
83 . The device of claim 81 , wherein the optoelectronic device is a solar cell device.
84 . The device of claim 72 , wherein the nanostructure is a sensor device.
85 . The device of claim 72 , wherein the nanostructure is used in a nanoprobe, nanotweezer, nanocantiliver, or nanobridge.
86 . The device of claim 72 , wherein the at least one nanostructure includes a plurality of nanowires, nanotapes, nanoribbons, nanotubes, or some combination thereof arranged in an array.
87 . The device of claim 86 , wherein the array is used in a display.
88 . The device of claim 86 , wherein the array is used in a sensor array.Join the waitlist — get patent alerts
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