Semiconductor chip and production process therefor

Abstract

A semiconductor chip including a bump projecting from a surface protective film thereof and a surface interconnection having a smaller height than the bump. The surface interconnection may project from the surface protective film or may be flush with the surface protective film. The surface interconnection may be connected to the bump. The bump may include a peripheral bump configured as surrounding a device formation region of the chip. The peripheral bump may be connected to the ground or a power source.

1 - 24 . (canceled) 
   
   
       25 . A method for forming a semiconductor substrate with a protruding conductive interface, comprising the steps of:
 forming at least one interconnect layer over a semiconductor substrate;   forming a protection layer over the at least one interconnect layer;   forming at least one opening through the protection layer and exposing at least a portion of the interconnect layer within the one opening; and   forming on the surface of the protection layer a conductive interface,   the step of forming the conductive interface including the steps of:
 forming a first conductive structure on the substrate within the opening to a first height above the protection layer with a deposition and patterning step, such that the first conductive structure extends upward from the surface of the protective layer to form the protruding conductive interface, and 
 forming a second conductive structure on the surface of the protection layer to a second height above the protection layer less than the first height with a deposition and patterning step, such that the second conductive structure is interconnected with at least another conductive interface on the substrate. 
   
   
   
       26 . The method of  claim 25 , wherein the step of forming the first conductive structure occurs prior to the step of forming the second conductive structure. 
   
   
       27 . The method of  claim 25 , wherein the step of forming the first conductive structure comprises the step selectively disposing conductive material within an area approximating the size of the opening to a thickness sufficient to form the protruding conductive interface. 
   
   
       28 . The method of  claim 25 , wherein the step of forming the conductive interface comprises the steps of:
 forming the first conductive structure by the step of selectively disposing conductive material within an area approximating the size of the opening to a thickness sufficient to form the protruding conductive interface to the first height above the protective layer; and   forming the second conductive structure on the surface of the protective layer by the step of selectively disposing conductive material within a defined area on the surface of the protective layer and in a pattern to connect to the at least another conductive interface.   
   
   
       29 . The method of  claim 25 , wherein the step of forming the second conductive structure comprises substantially the same process as the step of forming the first conductive structure. 
   
   
       30 . The method of  claim 25 , wherein the step of forming the opening comprises the step of forming two openings in the protective layer, each exposing a portion of the interconnection layer, and the step of forming the second conductive structure comprises the step of forming the second conductive structure to connect to the portion of the interconnect layer exposed within the second opening. 
   
   
       31 . The method of  claim 30 , wherein the step of forming the second conductive structure comprises the step of forming the second conductive structure to connect to at least a portion of the first conductive structure. 
   
   
       32 . The method of  claim 25 , wherein the step of forming the second conductive structure comprises the step of forming the second conductive structure to connect to at least a portion of the first conductive structure. 
   
   
       33 . The method of  claim 32 , wherein the step of forming the second conductive structure comprises the step of forming the second conductive structure except an area of the opening. 
   
   
       34 . The method of  claim 25 , wherein the deposition and patterning step comprises the steps of:
 masking a select portion of the surface of the protective layer to expose select areas thereof; and   introducing conductive material into the exposed areas to a desired thickness.   
   
   
       35 . The method of  claim 34 , wherein the step of introducing conductive material comprises an electroplating operation. 
   
   
       36 . A method forming a semiconductor substrate with a protruding conductive interface, comprising the steps of:
 forming a protection layer over the surface of a silicon substrate having underlying processed layers including at least one interconnection layer; and   forming on the surface of the protection layer a conductive interface,   the step of forming the conductive interface including the steps of:
 forming a first conductive structure on the substrate to a first height above the protection layer to connect to a desired portion of the interconnection layer with a defined processing step, such that the first conductive structure extends upward from the surface of the protective layer to form the protruding conductive interface, and 
 forming a second conductive structure on the surface of the protection layer to a second height above the protection layer less than the first height with processing step substantially the same as the defined processing step, such that the second conductive structure is interconnected with at least another conductive interface on the substrate. 
   
   
   
       37 . The method of  claim 36 , wherein the step of forming the first conductive structure comprises forming an opening in the protective layer to expose the desired portion of the interconnection layer, wherein the defined process is operable to introduce conductive material into the opening to a thickness sufficient to extend upward from the surface of the interconnection layer through the protection layer to the first height. 
   
   
       38 . The method of  claim 37 , and further comprising forming a second opening in the protective layer wherein the second conductive structure contacts the interconnect layer through the second opening. 
   
   
       39 . The method of  claim 37 , wherein the second conductive stricture conductively interfaces with the first conductive structure above the interconnect layer. 
   
   
       40 . The method of  claim 37 , wherein the second conductive structure conductively interfaces with the first conductive structure without encroaching upon the opening. 
   
   
       41 . The method of  claim 36 , wherein the second conductive layer is formed after the first conductive layer. 
   
   
       42 . The method of  claim 36 , wherein the second conductive layer conductively interfaces to the first conductive structure. 
   
   
       43 . The method of  claim 36 , wherein the second conductive layer conductively interfaces between the first conductive structure and the interconnection layer remote from the first conductive structure through the protective layer.