Substrate-Holder, Etching Method of the Substrate, and the Fabrication Method of a Magnetic Recording Media

Abstract

A substrate holder that forms a concavo-convex pattern on recording layers of both of front and back sides of a magnetic recording media is provided. The substrate holder includes an insulator member having a concave portion that holds the etching substrate and a through-hole formed just below the concave portion, and a conductive member having a convex portion that is engaged with the through-hole. A gap is defined between a front side of the convex portion and the bottom surface of the substrate in a state where the etching substrate is mounted on the concave portion, and a thickness of the gap is equal to or higher than 0.5 mm and equal to or lower than 1 mm, and a thickness of the insulator member is equal to or higher than 1 mm and equal to or lower than 15 mm.

1 . A substrate holder, comprising:
 a plate-like insulator member having a plurality of through-holes; and   a conductive holding member having concave portions that can be engaged with the respective through-holes,   wherein a substrate mounting surface and a gap having a thickness in a direction perpendicular to the substrate mounting surface are formed in each of the through-holes in a state where the concave portions are engaged with the through-holes.   
     
     
         2 . The substrate holder according to  claim 1 ,
 wherein the thickness of the gap is equal to or higher than 0.05 mm and equal to or lower than 1 mm, and the thickness of the plate-like insulator member is equal to or higher than 1 mm and equal to or lower than 15 mm.   
     
     
         3 . The substrate holder according to  claim 1 ,
 wherein when the thickness of the substrate to be processed which is held by the substrate holding surface is t 3 , the gap having a thickness of t 6  is defined between the concave portion front side and the back side of the substrate to be processed, the thickness t 6  of the gap is equal to or higher than 0.05 mm and equal to or lower than 1 mm, the thickness t 1   c  of the insulator member is equal to higher than 1 mm and equal to or lower than 15 mm, and a relationship of t 1   c >(t 3 +6×t 6 ) is satisfied.   
     
     
         4 . The substrate holder according to  claim 1 ,
 wherein the plate-like insulator member and the conductive holding member are formed of a disc-shaped member, respectively, and   wherein the plate-like insulator member and the conductive holding member can be separated from each other in a direction perpendicular to the substrate mounting surface.   
     
     
         5 . The substrate holder according to  claim 1 , further comprising a mechanism for introducing a gas in the gap. 
     
     
         6 . An etching device comprising an atmosphere transportation robot, a lock chamber, a vacuum transportation robot, and a vacuum processing chamber, wherein a substrate to be processed having both of front and back sides to be processed is etched, the etching device further comprising:
 an atmosphere transportation robot that transports the substrate holder between a hoop that can receive a plurality of substrate holders on each of which a plurality of substrates to be processed are mounted and the lock chamber; and   a vacuum transportation robot that transports the substrate holder between the lock chamber and the vacuum processing chamber,   wherein the vacuum processing chamber has a stage that mounts the plurality of substrate holders thereon for etching one substrate surface of the substrate to be processed,   wherein the substrate holder includes a plate-like insulator member having a plurality of through-holes, and a conductive holding member having convex portions that can be engaged with the respective through-holes, and a substrate mounting surface and a gap having a thickness in a direction perpendicular to the substrate mounting surface are formed in each of the through-holes in a state where the convex portions of the conductive holding member is engaged with the through-holes of the plate-like insulator member, and the plate-like insulator member and the conductive holding member can be separated from each other,   wherein the etching device is constituted so that after the substrate to be processed whose one substrate surface has been processed within the substrate holder is reversed, the substrate holders are mounted on the stage for etching the other surface of the substrate to be processed.   
     
     
         7 . A method of fabricating a magnetic recording media having recording layers on both of front and back sides, the method comprising the steps of:
 etching a base resist on both sides of the substrate to be processed by the aid of plasma of a gas containing O 2  or CO 2 ;   etching an insulator layer by the aid of plasma of a fluorocarbon system, and   removing the resist that remains on the upper portion of the insulator layer by the aid of O 2  plasma,   wherein at least the above three steps are processed within the same processing chamber consistently.   
     
     
         8 . The method of fabricating the magnetic recording media according to  claim 7 , further comprising the step of interrupting discharge between the respective steps. 
     
     
         9 . A method of etching both sides of a substrate to be processed by the aid of a substrate holder in an etching device having an atmosphere transportation portion, a lock chamber, a vacuum transportation robot, and a vacuum processing chamber,
 wherein the substrate holder includes a plate-like insulator member having a plurality of through-holes, and a conductive holding member having convex portions that can be engaged with the respective through-holes, and a substrate mounting surface and a gap having a thickness in a direction perpendicular to the substrate mounting surface are formed in each of the through-holes in a state where the convex portions of the conductive holding member is engaged with the through-holes of the plate-like insulator member,   wherein the method comprising a plurality of steps to a substrate mounted on the substrate holder, and   wherein the plurality of steps to the substrate mounted on the substrate holder are processed within the same processing chamber consistently.   
     
     
         10 . The plasma etching method according to  claim 9 , further comprising the steps of:
 etching a base resist on the substrate to be processed which is mounted on the substrate holder by the aid of plasma of a gas containing O 2  or CO 2 ;   etching an insulator layer by the aid of plasma of a fluorocarbon system, and   removing the resist that remains on the upper portion of the insulator layer by the aid of O 2  plasma,   wherein at least the above three steps are conducted on the substrate to be processed within the same processing chamber consistently.   
     
     
         11 . The plasma etching method according to  claim 9 , further comprising the steps of:
 etching a base resist on the substrate to be processed which is mounted on the substrate holder by the aid of plasma of a gas containing O 2  or CO 2 ;   etching a magnetic layer by the aid of plasma of a CO+NH 3  system, and   removing the resist that remains on the upper portion of the magnetic layer by the aid of O 2  plasma,   wherein at least the above three steps are conducted within the same processing chamber consistently.