Image sensor IC

Abstract

Provided is an image sensor IC in which a conductive material transmissive to light, which is fixed to the same potential, is formed under a protection film in a plurality of pixel regions. The conductive material transmissive to light for potential fixation is formed in each pixel, has a narrow and linear shape, and is electrically connected so as to hold the same potential as a potential of a silicon substrate. Accordingly, a potential of each of the regions which become a base at the time of forming the protective film is kept constant in an entire pixel region, thereby obtaining a uniform thickness and quality of the protective film. As a result, variation in photoelectric conversion characteristic of the pixels can be eliminated.

1 . An image sensor IC having photodiodes comprising:
 a silicon substrate;   a plurality of pixel regions each having one of the photodiode, and disposed on the silicon substrate;   a protective film disposed on the plurality of pixel regions; and   a plurality of conductors transmissive to light, each disposed on a lower surface of the protective film disposed on each of the plurality of pixel regions, and fixed to a same potential.   
   
   
       2 . An image sensor IC according to  claim 1 , wherein the plurality of conductors comprise a polycrystalline silicon thin film. 
   
   
       3 . An image sensor IC according to  claim 1 , wherein the plurality of conductors comprise an indium tin oxide (ITO) thin film. 
   
   
       4 . An image sensor IC according to  claim 2 , wherein a thickness of the polycrystalline silicon thin film is 1,000 Å or smaller. 
   
   
       5 . An image sensor IC according to  claim 2 , wherein a thickness of the polycrystalline silicon thin film is 500 Å or smaller. 
   
   
       6 . An image sensor IC according to  claim 2 , wherein the plurality of conductors has a shape with an opening for not blocking incident light to the plurality of pixel regions. 
   
   
       7 . An image sensor IC according to  claim 2 , wherein the plurality of conductors has a shape of combining straight lines for not blocking incident light to the plurality of pixel regions. 
   
   
       8 . An image sensor IC according to  claim 2 , wherein the plurality of conductors is electrically connected so as to hold the same potential as a substrate potential of the silicon substrate. 
   
   
       9 . An image sensor IC according to  claim 3 , wherein the plurality of conductors is electrically connected to hold the same potential as a substrate potential of the silicon substrate.