Heating apparatus and semiconductor manufacturing apparatus

Abstract

It is an object to provide a heating apparatus and semiconductor manufacturing apparatus which can carry out a fine heating temperature control easily. A heating apparatus for heating a semiconductor substrate placed on a support arranged in a reaction chamber of a semiconductor manufacturing apparatus includes a plurality of heat source units, each of which has a heat source lamp being attachable and detachable, and being attachable by changing orientations in the circumferential direction. A semiconductor manufacturing apparatus includes: a reaction chamber to which a reaction gas is supplied; a support arranged in the reaction chamber; and a heating apparatus which heats a semiconductor substrate placed on the support, wherein the heating apparatus includes a plurality of heat source units, each of which has a heat source lamp being attachable and detachable, and being attachable by changing orientations in the circumferential direction.

1 . A heating apparatus for heating a semiconductor substrate placed on a support arranged in a reaction chamber of a semiconductor manufacturing apparatus, wherein
 the heating apparatus includes a plurality of heat source units, each of which has a heat source lamp being attachable and detachable, and being attachable by changing orientations in the circumferential direction.   
   
   
       2 . The heating apparatus according to  claim 1 , wherein
 each of the heat source units has a hexagonal outer shape.   
   
   
       3 . The heating apparatus according to  claim 1 , wherein
 each of the heat source units has a light reflector which reflects light emitted from the heat source lamp, and   the heat source lamp, which has a cylindrical shape, is substantially arranged parallel with the light reflector.   
   
   
       4 . The heating apparatus according to  claim 3 , wherein
 a distance between the heat source lamp and the light reflector can be adjusted.   
   
   
       5 . The heating apparatus according to  claim 3 , wherein
 the light reflector is covered with a gold film.   
   
   
       6 . The heating apparatus according to  claim 3 , wherein
 the light reflector is attachable and detachable, and is attachable by changing orientations in the circumferential direction, and   the light reflector has a hexagonal outer shape.   
   
   
       7 . The heating apparatus according to  claim 1 , wherein
 a partition wall is arranged between the heat source units.   
   
   
       8 . A semiconductor manufacturing apparatus comprising: a reaction chamber to which a reaction gas is supplied; a support arranged in the reaction chamber; a heating apparatus which heats a semiconductor substrate placed on the support, wherein
 the heating apparatus includes a plurality of heat source units, each of which has a heat source lamp being attachable and detachable, and being attachable by changing orientations in the circumferential direction.   
   
   
       9 . The heating apparatus according to  claim 8 , wherein
 each of the heat source units has a hexagonal outer shape.   
   
   
       10 . The semiconductor manufacturing apparatus according to  claim 8 , wherein
 each of the heat source units has a light reflector which reflects light emitted from the heat source lamp, and   the heat source lamp, which has a cylindrical shape, is substantially arranged parallel with the light reflector.   
   
   
       11 . The semiconductor manufacturing apparatus according to  claim 10 , wherein
 a distance between the heat source lamp and the light reflector can be adjusted.   
   
   
       12 . The semiconductor manufacturing apparatus according to  claim 10 , wherein
 the light reflector is covered with a gold film.   
   
   
       13 . The semiconductor manufacturing apparatus according to  claim 10 , wherein
 the light reflector is attachable and detachable, and is attachable by changing orientations in the circumferential direction, and   the light reflector has a hexagonal outer shape.   
   
   
       14 . The semiconductor manufacturing apparatus according to  claim 8 , wherein
 a partition wall is arranged between the heat source units.