Exposure mask, optical proximity correction device, optical proximity correction method, manufacturing method of semiconductor device, and optical proximity correction program

Abstract

An optical proximity correction is provided that generates a corrected pattern P 0 corresponding to a state M 0 where the focus is in focus and the exposure dose is optimal, a corrected pattern P 1 corresponding to a state M 1 where the focus is in focus and the exposure dose is at the lower limit, a corrected pattern P 2 corresponding to a state M 2 where the focus is in focus and the exposure dose is at the upper limit, a corrected pattern P 3 corresponding to a state M 3 where the focus deviates to the lower side and the exposure dose is optimal, and a corrected pattern P 4 corresponding to a state M 4 where the focus deviates to the upper side and the exposure dose is optimal. By combining these corrected patterns P 0 through P 4, a composed pattern P 5 is generated that reflects the scattering of the exposure dose and the deviation of the focus.

1 . An exposure mask, comprising:
 a mask pattern corrected by simulation-based correction based on both:
 measured data with proper focus; and 
 exposure dose and measured data with at least one of focus and exposure dose deviating. 
   
     
     
         2 . A manufacturing method for a semiconductor device, comprising:
 applying photoresist onto a semiconductor wafer;   exposing the photoresist through an exposure mask that is corrected by simulation-based correction based on both measured data with proper focus and exposure dose and measured data with at least one of focus and exposure dose deviating;   developing the exposed photoresist; and   providing the semiconductor wafer with one of ion implantation and etching using the developed photoresist as a mask.