System and method for producing synthetic diamond

Abstract

Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described., as well as a system for use in performing such a method, and articles incorporating such a composition.

1 . A synthetic diamond comprising a first monocrystalline diamond layer and a second monocrystalline diamond layer, the layers formed on a compatible substrate, with the first layer in contact with the second layer, the layers formed by chemical vapor deposition, the first diamond layer formed from a carbon source, the second diamond layer comprising at least one impurity or at least one carbon isotope wherein the concentrations of the impurity or carbon isotope in the second monocrystalline diamond layer are selected such that the lattice constant of the first layer and the lattice constant of the second layer are substantially identical and the properties of the layers are substantially identical. 
     
     
         2 . A synthetic diamond comprising a first monocrystalline diamond layer and a second monocrystalline diamond layer formed on a compatible substrate, with the first layer in contact with the second layer, the layers formed by chemical vapor deposition, the first diamond layer formed from a carbon source, the second diamond layer comprising at least one impurity or at least one carbon isotope wherein the concentrations of the impurity or carbon isotope in the second monocrystalline diamond layer are selected such that the lattice constant of the first layer and the lattice constant of the second layer are mismatched such that the lattice constant is substantially less than or substantially greater than the lattice constant of the first layer by an amount sufficient to obtain a measurable difference in properties between the layers. 
     
     
         3 . A method of forming a synthetic diamond comprising forming a first monocrystalline diamond layer and a second monocrystalline diamond layer formed on a compatible substrate, with the first layer in contact with the second layer, the layers formed by chemical vapor deposition, the first diamond layer formed from a carbon source, the second diamond layer comprising at least one impurity or at least one carbon isotope wherein the concentrations of the impurity or carbon isotope in the second monocrystalline diamond layer are selected such that the lattice constant of the first layer and the lattice constant of the second layer are substantially identical and the properties of the layers are substantially identical. 
     
     
         4 . A method of forming a synthetic diamond comprising forming a first monocrystalline diamond layer and a second monocrystalline diamond layer formed on a compatible substrate, with the first layer in contact with the second layer, the layers formed by chemical vapor deposition, the first diamond layer formed from a carbon source, the second diamond layer comprising at least one impurity or at least one carbon isotope wherein the concentrations of the impurity or carbon isotope in the second monocrystalline diamond layer are selected such that the lattice constant of the first layer and the lattice constant of the second layer are mismatched such that the lattice constant is substantially less than or substantially greater than the lattice constant of the first layer by an amount sufficient to obtain a measurable difference in properties between the layers. 
     
     
         5 . The diamond of  claim 2  wherein the concentrations of the impurity or carbon isotope in the second monocrystalline diamond layer are selected such that the lattice constant of the first layer and the lattice constant of the second layer are mismatched such that the lattice constant is substantially less than or substantially greater than the lattice constant such that Δa/a o  is about 0.01 to 0.0001. 
     
     
         6 . The method of  claim 4  wherein the concentrations of the impurity or carbon isotope in the second monocrystalline diamond layer are selected such that the lattice constant of the first layer and the lattice constant of the second layer are mismatched such that the lattice constant is substantially less than or substantially greater than the lattice constant such that Δa/a o  is about 0.01 to 0.0001. 
     
     
         7 . The diamond of  claim 2  wherein the difference in lattice constant from the first layer to the second layer results in a visible difference in refractive index. 
     
     
         8 . The diamond of  claim 2  wherein the difference in lattice constant from the first layer to the second layer results in a fracture line. 
     
     
         9 . The diamond of  claim 2  wherein the impurity has an atomic radius greater than  12 C and the presence of the impurity increases lattice strain compared to a layer of  12 C. 
     
     
         10 . The diamond of  claim 2  wherein the isotope has an atomic radius less than  12 C and the presence of the impurity increases lattice strain compared to a layer of  12 C. 
     
     
         11 . The diamond of  claim 2  wherein there are three or more layers, the layers have alternating lattice mismatch. 
     
     
         12 . The diamond of  claim 2  wherein the first layer is in compression with respect to the second which is in tension. 
     
     
         13 . The diamond of  claim 2  wherein the first layer comprises 99% or more  12 C and 1% or less  13 c. 
     
     
         14 . The diamond of  claim 2  wherein the first diamond layer is made of a carbon source with natural concentration of isotopes and impurities. 
     
     
         15 . The diamond of  claim 1  wherein the first diamond layer is made of a carbon source with a non-natural concentration of an isotope or impurities. 
     
     
         16 . The method of  claim 4  wherein the first diamond layer is made of a carbon source with natural concentration of isotopes and impurities. 
     
     
         17 . The method of  claim 3  wherein the first diamond layer is made of a carbon source with a non-natural concentration of an isotope or impurities. 
     
     
         18 . The diamond of  claim 2  wherein the first layer and the second layer independently have a thickness of about 20 to 100 micrometers. 
     
     
         19 . The diamond of  claim 2  wherein the second layer comprises a boron doped diamond layer with a critical thickness of about 1.9×10 3  to 6.46×10 9  Angstroms. 
     
     
         20 . The diamond of  claim 2  wherein the diamond is a component of a semiconductor. 
     
     
         21 . The diamond of  claim 20  wherein the semiconductor comprises a P-N junction, an FET, a Schottky diode or a high voltage switch. 
     
     
         22 . The diamond of  claim 2  wherein the diamond comprises a tool. 
     
     
         23 . The diamond of  claim 22  wherein the tool comprises a cutting tool, a die, a wear plate, a bearing, a heat spreader, a microtome or a spacer. 
     
     
         24 . The diamond of  claim 2  wherein the diamond comprises a quantum computing device.