Temperature calculation based on non-uniform leakage power

Abstract

A system may include determination of a spatial power map associated with an integrated circuit based on an architecture of the circuit, generation of a spatial thermal map associated with the integrated circuit based on the spatial power map, and determination of a spatial leakage power map based on the spatial thermal map. In some aspects, a system includes determination of a temperature of an integrated circuit, comparison of the temperature with a thermal divergence temperature, determination that the temperature of the integrated circuit is primarily due to leakage power, and disabling of power to the integrated circuit.

1 . A method comprising:
 determining a spatial power map associated with an integrated circuit based on an architecture of the circuit;   generating a spatial thermal map associated with the integrated circuit based on the spatial power map; and   determining a spatial leakage power map based on the spatial thermal map.   
   
   
       2 . A method according to  claim 1 , wherein determining the spatial leakage power map comprises:
 modeling spatial leakage power based on a fabrication process of the integrated circuit.   
   
   
       3 . A method according to  claim 1 , further comprising:
 determining a second spatial power map associated with the integrated circuit based on the spatial leakage power map;   generating a second spatial thermal map associated with the integrated circuit based on the second spatial power map; and   determining a second spatial leakage power map based on the second spatial thermal map.   
   
   
       4 . A method according to  claim 3 , further comprising:
 determining whether the second spatial thermal map is substantially similar to the spatial thermal map.   
   
   
       5 . A method according to  claim 1 , further comprising:
 determining a leakage power shutdown temperature based on the spatial leakage power map.   
   
   
       6 . A method comprising:
 determining a temperature of an integrated circuit;   comparing the temperature with a thermal divergence temperature;   determining that the temperature of the integrated circuit is primarily due to leakage power; and   disabling power to the integrated circuit.   
   
   
       7 . A method according to  claim 6 , wherein determining that the temperature of the integrated circuit is primarily due to leakage power comprises:
 determining that the integrated circuit is inactive.   
   
   
       8 . A method according to  claim 6 , wherein comparing the temperature with the thermal divergence temperature comprises:
 determining that the temperature is proximate to the thermal divergence temperature of the integrated circuit, and further comprising:   after determining that the temperature of the integrated circuit is primarily due to leakage power, measuring a second temperature of the integrated circuit; and   determining that the second temperature is greater than the thermal divergence temperature of the integrated circuit.   
   
   
       9 . A method according to  claim 6 , further comprising:
 determining the thermal divergence temperature of the integrated circuit based on a plurality of stored temperatures.   
   
   
       10 . An apparatus comprising:
 an integrated circuit;   a temperature sensor to measure a temperature of the integrated circuit; and   a comparator to compare the temperature with a thermal divergence temperature;   wherein the integrated circuit is to determine that the temperature of the integrated circuit is primarily due to leakage power, and disable power to the integrated circuit.   
   
   
       11 . An apparatus according to  claim 10 , wherein the determination that the temperature of the integrated circuit is primarily due to leakage power comprises:
 a determination that the integrated circuit is inactive.   
   
   
       12 . An apparatus according to  claim 10 , wherein the comparator is to determine that the temperature is proximate to the thermal divergence temperature of the integrated circuit,
 wherein temperature sensor is to measure a second temperature of the integrated circuit after it is determined that the temperature of the integrated circuit is primarily due to leakage power, and   wherein the integrated circuit is further to determine that the second temperature is greater than the thermal divergence temperature of the integrated circuit.   
   
   
       13 . An apparatus according to  claim 10 , further comprising:
 a memory comprising a plurality of stored temperatures including the thermal divergence temperature.   
   
   
       14 . A system comprising:
 a double data rate memory;   an integrated circuit;   a temperature sensor to measure a temperature of the integrated circuit; and   a comparator to compare the temperature with a thermal divergence temperature;   wherein the integrated circuit is to determine that the temperature of the integrated circuit is primarily due to leakage power, and disable power to the integrated circuit.   
   
   
       15 . A system according to  claim 14 , wherein the determination that the temperature of the integrated circuit is primarily due to leakage power comprises:
 a determination that the integrated circuit is inactive.   
   
   
       16 . A system according to  claim 14 , wherein the comparator is to determine that the temperature is proximate to the thermal divergence temperature of the integrated circuit,
 wherein temperature sensor is to measure a second temperature of the integrated circuit after it is determined that the temperature of the integrated circuit is primarily due to leakage power, and   wherein the integrated circuit is further to determine that the second temperature is greater than the thermal divergence temperature of the integrated circuit.