Organic light emitting display device and manufacturing method of the same

Abstract

An organic light emitting display device and a manufacturing method of forming an inorganic layer formed on the top of the sealing film with nitride are disclosed. In one embodiment, the organic light emitting display device includes: i) a substrate on which at least one organic light emitting diode is formed and ii) a sealing film stacked with at least one organic film and inorganic film and sealing the organic light emitting diode, wherein the top of the sealing film is formed of an inorganic film formed of nitride.

1 . An organic light emitting display device comprising:
 a substrate;   at least one organic light emitting diode formed on the substrate; and   a sealing film configured to prevent at least one of moisture and oxygen from contacting the at least one organic light emitting diode, wherein the sealing film comprises at least one organic layer and at least one inorganic layer,   wherein the sealing film comprises a top layer, which is the farthest from the substrate among the layers of the sealing film, and wherein the top layer comprises a nitride material.   
     
     
         2 . The organic light emitting display device as claimed in  claim 1 , wherein the nitride material is at least one selected from a group consisting of SiN, SiO x N y  and AlO x N y . 
     
     
         3 . The organic light emitting display device as claimed in  claim 1 , wherein the at least one organic layer comprises at least one selected from a group consisting of epoxy, acrylate and urethane acrylate. 
     
     
         4 . The organic light emitting display device as claimed in  claim 1 , wherein the sealing film further comprises a side layer extending from the top layer and toward the substrate. 
     
     
         5 . The organic light emitting display device as claimed in  claim 1 , wherein the top layer comprises a plurality of sublayers stacked together, wherein at least part of the plurality of sublayers comprise a nitride material. 
     
     
         6 . The organic light emitting display device as claimed in  claim 1 , wherein the top layer has a thickness of about 0.1 μm to about 1.05 μm. 
     
     
         7 . The organic light emitting display device as claimed in  claim 1 , further comprising a protective film between the organic light emitting diode and the sealing film. 
     
     
         8 . The organic light emitting display device as claimed in  claim 1 , wherein the top layer has a thickness of about 0.05 μm to about 0.1 μm. 
     
     
         9 . The organic light emitting display device as claimed in  claim 1 , wherein the sealing film comprises:
 a first organic layer formed over the at least one organic light emitting diode;   a first inorganic layer formed on the first organic layer;   a second organic layer formed on the first inorganic layer; and   a second inorganic layer formed on the second organic layer.   
     
     
         10 . The organic light emitting display device as claimed in  claim 1 , wherein the sealing film has a thickness of about 1 μm to about 10 μm. 
     
     
         11 . The organic light emitting display device as claimed in  claim 1 , wherein the sealing film comprises two or more inorganic layers, wherein at least one organic layer is interposed between two of the inorganic layers. 
     
     
         12 . A method of manufacturing an organic light emitting display device comprising:
 providing a substrate and at least one organic light emitting diode formed on the substrate; and   forming a film over the at least one organic light emitting diode, wherein the film comprises at least one organic layer and at least one inorganic layer, wherein the film comprises a top layer which is the farthest from the substrate among the layers of the film, and wherein the top layer comprises a nitride material.   
     
     
         13 . The method of  claim 12 , wherein the nitride material is at least one selected from a group consisting of SiN, SiO x N y  and AlO x N y . 
     
     
         14 . The method of  claim 12 , further comprising forming a protective film over the at least one organic light emitting diode, wherein the protective film is interposed between the at least one organic light emitting diode and the film. 
     
     
         15 . The method of  claim 12 , wherein forming of the film comprises:
 forming a first organic layer over the at least one organic light emitting diode;   forming a first inorganic layer on the first organic layer;   forming a second organic layer on the first inorganic layer; and   forming a second inorganic layer on the second organic layer.   
     
     
         16 . An organic light emitting display device comprising:
 a substrate;   an array of organic light emitting diodes formed on the substrate, wherein the array comprises a top surface and side surfaces; wherein the top surface faces away from the substrate, and wherein the side surfaces interconnect the top surface and the substrate; and   a film, formed over the array, configured to prevent at least one of moisture and oxygen from contacting the array, wherein the film comprises at least one layer, which comprises a nitride material, and wherein the at least one layer comprising the nitride material has a Pencil Hardness value of HB or harder.   
     
     
         17 . The device of  claim 16 , wherein the nitride material is at least one selected from a group consisting of SiN, SiO x N y  and AlO x N y . 
     
     
         18 . The device of  claim 16 , wherein the top layer has a thickness of about 0.05 μm to about 1.05 μm. 
     
     
         19 . The device of  claim 16 , wherein the Pencil Hardness value is about 9H. 
     
     
         20 . The device of  claim 16 , wherein the film comprises a side layer covering at least part of the side surfaces of the array, wherein the side layer extends from the top layer.