Probes and Media for High Density Data Storage

Abstract

A device in accordance with embodiments of the present invention comprises a contact probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the contact probe can include a silicon core having a conductive coating. Contact probes in accordance with the present invention can be applied to a phase change media, for example, to form an indicia in the phase change media by changing the electrical resistivity of a portion of the phase change media.

1 . A system for storing data, the system comprising:
 a memory device having a media that is adapted to store data;   a probe electrically connectable with the memory device, the probe including:
 a first portion formed from an insulator, and 
 a second portion formed from a conductor, the second portion being disposed adjacent to the first portion; 
   wherein the second portion communicates electrically with the media to perform one of a read and a write in the media;   wherein the media has two or more ranges of electrical resistivity to represent one or more data.   
     
     
         2 . The system of  claim 1 , wherein when a current is applied between the probe and the memory device, an electrical resistivity within one of the two or more ranges of electrical resistivity can be provided to a portion of the media. 
     
     
         3 . The system of  claim 1 , wherein the probe is electrically connected with the memory device when the probe contacts the memory device. 
     
     
         4 . The system of  claim 1 , wherein the media is a phase change material. 
     
     
         5 . A system for storing data, the system comprising:
 a memory device having a media that is adapted to store data;   a probe electrically connectable with the memory device, the probe including:
 a first portion formed from an insulator, and 
 a second portion formed from a conductor, the second portion being disposed adjacent to the first portion; 
   wherein the first portion and the second portion can simultaneously contact the media and the second portion communicates electrically with the media to perform one of a read and a write in the media;   wherein the media has two or more ranges of electrical resistivity to represent one or more data.   
     
     
         6 . The system of  claim 5 , wherein when a current is applied between the probe and the memory device, an electrical resistivity within one of the two or more ranges of electrical resistivity can be provided to a portion of the media. 
     
     
         7 . The system of  claim 5 , wherein the probe is electrically connected with the memory device when the probe contacts the memory device. 
     
     
         8 . The system of  claim 5 , wherein the media is a phase change material. 
     
     
         9 . A system for storing data, the system comprising:
 a memory device having a media that is adapted to store data;   a probe electrically connectable with the memory device, the probe including:
 a first portion formed from an insulator, and 
 a second portion formed from a conductor, the second portion formed side by side with the first portion; 
 the first and second portion having respective adjacent first and second edges, which first and second edges can simultaneously contact the media; 
   wherein the second portion communicates electrically with the media to perform one of a read and a write in the media;   wherein the media has two or more ranges of electrical resistivity to represent one or more data.   
     
     
         10 . The system of  claim 9 , wherein when a current is applied between the probe and the memory device, an electrical resistivity within one of the two or more ranges of electrical resistivity can be provided to a portion of the media. 
     
     
         11 . The system of  claim 9 , wherein the probe is electrically connected with the memory device when the probe contacts the memory device. 
     
     
         12 . The system of  claim 9 , wherein the media is a phase change material.