Semiconductor manufacturing apparatus

Abstract

A semiconductor manufacturing apparatus includes: an ion source and a beam line for introducing an ion beam into a target film which is formed over a wafer with an insulating film interposed therebetween; a flood gun for supplying the target film with electrons for neutralizing charges contained in the ion beam; a rotating disk for subjecting the target film to mechanical scanning of the ion beam in two directions composed of r-θ directions; a rear Faraday cage for measuring the current density produced by the ion beam; a disk-rotational-speed controller and a disk-scanning-speed controller for changing the scanning speed of the target film; and a beam current/current density measuring instrument for controlling, according to the current density, the scanning speed of the target film.

1 . A semiconductor manufacturing apparatus comprising:
 impurity introduction means for introducing impurities with charges into a target film which is formed over a semiconductor substrate with an insulating film interposed therebetween;   electron supply means for supplying the target film with electrons for neutralizing the charges contained in the impurities;   scanning means for subjecting the target film to mechanical scanning of the impurities in two directions composed of X-Y directions or r-θ directions;   current density measurement means for measuring the current density J (A/m 2 ) produced by the impurities;   scanning speed changing means for changing the scanning speed of the target film; and   scanning speed control means for controlling, according to the current density J (A/m 2 ), the scanning speed of the target film.   
     
     
         2 . The apparatus of  claim 1 ,
 wherein the scanning speed control means controls, according to the current density J (A/m 2 ), the scanning speed of the target film to a predetermined value or more.   
     
     
         3 . The apparatus of  claim 2 ,
 wherein the predetermined value of the scanning speed is J/5 (m/s).   
     
     
         4 . The apparatus of  claim 1 ,
 wherein the impurity introduction means is ion implantation means for implanting ions as the impurities.   
     
     
         5 . The apparatus of  claim 1 , further comprising:
 electronic energy control means for controlling energies of electrons supplied by the electron supply means; and   electronic energy measurement means for measuring energies of electrons supplied by the electron supply means.   
     
     
         6 . The apparatus of  claim 5 ,
 wherein the electronic energy measurement means measures the maximum energy of electrons supplied by the electron supply means.   
     
     
         7 . The apparatus of  claim 5 ,
 wherein the electronic energy measurement means controls the electronic energy control means based on the measured electron energy so that the maximum energy of electrons supplied by the electron supply means is set at a predetermined value or less.   
     
     
         8 . The apparatus of  claim 1 ,
 wherein the insulating film has a thickness of t (nm), and the electronic energy control means controls the maximum electron energy to a value greater than 0 (eV) and not greater than 2 t (eV).   
     
     
         9 . A semiconductor manufacturing apparatus comprising:
 impurity introduction means for introducing impurities with charges into a target film which is formed over a semiconductor substrate with an insulating film interposed therebetween;   electron supply means for supplying the target film with electrons for neutralizing the charges contained in the impurities;   scanning means for subjecting the target film to mechanical scanning of the impurities in two directions composed of X-Y directions or r-θ directions;   current density measurement means for measuring the current density produced by the impurities;   scanning speed measurement means for measuring the scanning speed v (m/s) of the target film;   scanning speed control means for controlling the scanning speed of the target film;   first current density control means for controlling the amount of generation of the impurities and the current density produced by the impurities; and   second current density control means for controlling the current density according to the scanning speed v (m/s).   
     
     
         10 . The apparatus of  claim 9 ,
 wherein the second current density control means controls, according to the scanning speed v (m/s), the impurity current density to a value greater than zero and not greater than a predetermined value.   
     
     
         11 . The apparatus of  claim 10 ,
 wherein the predetermined value of the current density is 5v (A/m 2 ).   
     
     
         12 . The apparatus of  claim 9 ,
 wherein if the current density is greater than 5v (A/m 2 ), the second current density control means controls the scanning means to temporarily stop the impurity introduction operation, and when the current density is controlled to a value equal to or smaller than 5v (A/m 2 ), the impurity introduction operation is started again.   
     
     
         13 . The apparatus of  claim 9 ,
 wherein the impurity introduction means is ion implantation means for implanting ions as the impurities.   
     
     
         14 . The apparatus of  claim 9 , further comprising:
 electronic energy control means for controlling energies of electrons supplied by the electron supply means; and   electronic energy measurement means for measuring energies of electrons supplied by the electron supply means.   
     
     
         15 . The apparatus of  claim 14 ,
 wherein the electronic energy measurement means measures the maximum energy of electrons supplied by the electron supply means.   
     
     
         16 . The apparatus of  claim 14 ,
 wherein the electronic energy measurement means controls the electronic energy control means based on the measured electron energy so that the maximum energy of electrons supplied by the electron supply means is set at a predetermined value or less.   
     
     
         17 . The apparatus of  claim 9 ,
 wherein the insulating film has a thickness of t (nm), and   the electronic energy control means controls the maximum electron energy to a value greater than 0 (eV) and not greater than 2 t (eV).   
     
     
         18 . A semiconductor manufacturing apparatus comprising:
 impurity introduction means for introducing impurities with charges into a target film which is formed over a semiconductor substrate with an insulating film interposed therebetween;   electron supply means for supplying the target film with electrons for neutralizing the charges contained in the impurities;   first scanning means for subjecting the target film to mechanical scanning of the impurities in one direction;   first scanning speed changing means for changing the scanning speed of the target film;   second scanning means for allowing the impurities to perform scanning in the vertical direction with respect to one said direction;   second scanning speed changing means for changing the scanning speed of the impurities;   current density measurement means for measuring the current density J (A/m 2 ) produced by the impurities; and   scanning speed control means for controlling, according to the current density J (A/m 2 ), the scanning speed of the target film and the scanning speed of the impurities.   
     
     
         19 . The apparatus of  claim 18 ,
 wherein the scanning speed control means controls, according to the current density J (A/m 2 ), the scanning speed of the impurities to a predetermined value or more.   
     
     
         20 . The apparatus of  claim 19 ,
 wherein the predetermined value of the scanning speed is J/5 (m/s).   
     
     
         21 . The apparatus of  claim 18 ,
 wherein the scanning speed control means controls, according to the current density J (A/m 2 ) of the impurities, the scanning speed of the impurities and the scanning speed of the target film to a predetermined value or greater.   
     
     
         22 . The apparatus of  claim 18 ,
 wherein the scanning speed control means controls the relative speed of the impurities to the target film to a value of J/5 (m/s) or higher, the relative speed being determined by the scanning speed of the impurities and the scanning speed of the target film.   
     
     
         23 . The apparatus of  claim 18 ,
 wherein the impurity introduction means is ion implantation means for implanting ions as the impurities.   
     
     
         24 . The apparatus of  claim 18 , further comprising:
 electronic energy control means for controlling energies of electrons supplied by the electron supply means; and   electronic energy measurement means for measuring energies of electrons supplied by the electron supply means.   
     
     
         25 . The apparatus of  claim 24 ,
 wherein the electronic energy measurement means measures the maximum energy of electrons supplied by the electron supply means.   
     
     
         26 . The apparatus of  claim 24 ,
 wherein the electronic energy measurement means controls the electronic energy control means based on the measured electron energy so that the maximum energy of electrons supplied by the electron supply means is set at a predetermined value or less.   
     
     
         27 . The apparatus of  claim 18 ,
 wherein the insulating film has a thickness of t (nm), and   the electronic energy control means controls the maximum electron energy to a value greater than 0 (eV) and not greater than 2 t (eV).   
     
     
         28 . A semiconductor manufacturing apparatus comprising:
 impurity introduction means for introducing impurities with charges into a target film which is formed over a semiconductor substrate with an insulating film interposed therebetween;   electron supply means for supplying the target film with electrons for neutralizing the charges contained in the impurities;   first scanning means for subjecting the target film to mechanical scanning of the impurities in one direction;   first scanning speed measurement means for measuring the scanning speed of the target film;   first scanning speed control means for controlling the scanning speed of the target film;   second scanning means for allowing the impurities to perform scanning in the vertical direction with respect to one said direction;   second scanning speed measurement means for measuring the scanning speed of the impurities;   second scanning speed control means for controlling the scanning speed of the impurities;   first current density control means for controlling the amount of generation of the impurities and the current density produced by the impurities; and   second current density control means for controlling the impurity current density according to the relative speed v (m/s) of the impurities to the target film determined by the scanning speed of the impurities and the scanning speed of the target film.   
     
     
         29 . The apparatus of  claim 28 ,
 wherein the second current density control means controls, according to the relative speed v (m/s), the impurity current density to a value greater than zero and not greater than a predetermined value.   
     
     
         30 . The apparatus of  claim 28 ,
 wherein the first current density control means controls the current density produced by the impurities to 5v (A/m 2 ) or smaller.   
     
     
         31 . The apparatus of  claim 28 ,
 wherein if the current density is greater than 5v (A/m 2 ), the second current density control means controls the scanning means to temporarily stop the impurity introduction operation, and when the current density is controlled to a value equal to or smaller than 5v (A/m 2 ), the impurity introduction operation is started again.   
     
     
         32 . The apparatus of  claim 28 ,
 wherein the impurity introduction means is ion implantation means for implanting ions as the impurities.   
     
     
         33 . The apparatus of  claim 28 , further comprising:
 electronic energy control means for controlling energies of electrons supplied by the electron supply means; and   electronic energy measurement means for measuring energies of electrons supplied by the electron supply means.   
     
     
         34 . The apparatus of  claim 33 ,
 wherein the electronic energy measurement means measures the maximum energy of electrons supplied by the electron supply means.   
     
     
         35 . The apparatus of  claim 33 ,
 wherein the electronic energy measurement means controls the electronic energy control means based on the measured electron energy so that the maximum energy of electrons supplied by the electron supply means is set at a predetermined value or less.   
     
     
         36 . The apparatus of  claim 28 ,
 wherein the insulating film has a thickness of t (nm), and   the electronic energy control means controls the maximum electron energy to a value greater than 0 (eV) and not greater than 2 t (eV).