Semiconductor device

Abstract

A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconductor substrate, a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode, a first hydrogen barrier film formed over the ferroelectric capacitor, an insulator formed over the first hydrogen barrier film, a contact plug disposed in the insulator and electrically connected with the upper electrode, a second hydrogen barrier film disposed between the contact plug and the insulator continuously, and a wiring connected with the contact plug.

1 . A semiconductor device comprising:
 a transistor formed on a semiconductor substrate;   a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode;   a first hydrogen barrier film formed over the ferroelectric capacitor;   an insulator formed over the first hydrogen barrier film;   a contact plug disposed in the insulator and the first hydrogen barrier film, and electrically connected with the upper electrode;   a second hydrogen barrier film formed of an insulating film;   a barrier metal film disposed between the contact plug and the second hydrogen barrier film, the second hydrogen barrier film covering side surfaces of the barrier metal film and the contact plug, the second hydrogen barrier film absent at a bottom of the contact plug;   a wiring connected with the contact plug; and   a third hydrogen barrier film formed of an insulating film, and extending to a surface of the insulator,   wherein the second hydrogen barrier film continues to the third hydrogen barrier film.   
   
   
       2 . The semiconductor device according to  claim 1 , wherein a fourth hydrogen barrier film is formed to cover the wiring. 
   
   
       3 . The semiconductor device according to  claim 1 ,
 wherein the wiring is formed in the insulator, and wherein the second hydrogen barrier film covers the side surfaces of the contact plug, and covers side and bottom faces of the wiring continuously.   
   
   
       4 . The semiconductor device according to  claim 3 , further comprising:
 a fourth hydrogen barrier film formed to cover the wiring.   
   
   
       5 . The semiconductor device according to  claim 3 , wherein the contact plug and the wiring are formed of an electroconductive material containing copper. 
   
   
       6 . The semiconductor device according to  claim 3 , wherein the contact plug is formed of an electroconductive material containing tungsten or aluminum, and wherein the wiring is formed of an electroconductive material containing aluminum or titanium nitride. 
   
   
       7 . The semiconductor device according to  claim 1 , wherein the second hydrogen barrier film is an aluminum oxide film. 
   
   
       8 . The semiconductor device according to  claim 1 , wherein the contact plug and the wiring are formed of an electroconductive material containing copper. 
   
   
       9 . The semiconductor device according to  claim 1 , wherein the contact plug is formed of an electroconductive material containing tungsten or aluminum, and wherein the wiring is formed of an electroconductive material containing aluminum or titanium nitride. 
   
   
       10 . The semiconductor device according to  claim 1 , further comprising:
 a second insulator formed on the third hydrogen barrier film, and the wiring therein is formed within the second insulator; and   a fourth hydrogen barrier film disposed between the wiring and the second insulator and extending along the second insulator continuously.   
   
   
       11 . The semiconductor device according to  claim 10 , further comprising:
 a fifth hydrogen barrier film formed to cover the wiring.   
   
   
       12 . The semiconductor device according to  claim 3 , further comprising:
 a second insulator formed over the wiring;   a second wiring formed above the wiring;   a second contact plug disposed in the second insulator and electrically connecting the wiring and the second wiring;   a fourth hydrogen barrier film disposed between the second contact plug and the second insulator continuously; and   a fifth hydrogen barrier film formed on the second insulator,   wherein the fourth hydrogen barrier film continues to the fifth hydrogen barrier film.   
   
   
       13 . A semiconductor device comprising:
 a transistor formed on a semiconductor substrate;   a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode;   a first insulator formed over the ferroelectric capacitor;   a first wiring formed above the ferroelectric capacitor;   a second insulator formed over the first wiring;   a second wiring formed above the first wiring;   a contact plug disposed in the second insulator and electrically connecting the first and second wirings;   a first hydrogen barrier film formed of an insulating film;   a barrier metal film disposed between the contact plug and the first hydrogen barrier film, the first hydrogen barrier film disposed covering side surfaces of the barrier metal film and the contact plug continuously, and the first hydrogen barrier film absent at a bottom of the contact plug; and   a second hydrogen barrier film formed of an insulating film, and extending to a surface of the second insulator,   wherein the first hydrogen barrier film continues to the second hydrogen barrier film.   
   
   
       14 . The semiconductor device according to  claim 1 , wherein the second and third hydrogen barrier films are aluminum oxide. 
   
   
       15 . The semiconductor device according to  claim 1 , wherein the insulator is TEOS. 
   
   
       16 . The semiconductor device according to  claim 3 , wherein the second and third hydrogen barrier films are aluminum oxide. 
   
   
       17 . The semiconductor device according to  claim 3 , wherein the insulator is TEOS. 
   
   
       18 . The semiconductor device according to  claim 13 , wherein the first and second hydrogen barrier films are aluminum oxide. 
   
   
       19 . The semiconductor device according to  claim 13 , wherein the second insulator is TEOS.