Photo diode fuse-id for cmos imagers

Abstract

A CMOS image pixel array formed on a chip is used for storing programmed information within the pixel array. Manufacturing lot and other data is written to the array during manufacturing and testing by applying a laser to pixels to render the photodiode defective. The programmed data is read from the pixel array using existing circuitry.

1 - 36 . (canceled) 
     
     
         37 . An imaging system with data storage, comprising:
 a chip having a sensor array, said sensor array comprising a plurality of pixels, wherein a first portion of said pixels are used for providing a signal representative of light incident to said sensor array, wherein a second portion of said pixels are used for providing programmed data storage, said second portion of said pixels comprising pixels representing data of one of a first and second logic state.   
     
     
         38 . The imaging system of  claim 37 , wherein said pixels representing data of a first logic state include photodiodes that are programmed to be defective. 
     
     
         39 . The imaging system of  claim 38 , wherein said pixels representing data of a first logic state include defective photodiodes in which said programmed defect is reversible. 
     
     
         40 . The imaging system of  claim 38 , wherein said photodiode of each of said pixels representing data of a first logic state is capable of being made defective by a laser. 
     
     
         41 . A method of operating an image sensor, comprising:
 storing data in a pixel array of said image sensor by programming selected pixels of said pixel array, wherein said programming further comprises:   disabling at least one of said selected: pixels to store data representing a first logic state; and   not disabling at least one of said selected pixels to store data representing a second logic state,   wherein the disabling of a selected pixel comprises making a photosensor of said disabled selected pixel defective.   
     
     
         42 . The method of  claim 41 , further comprising the step of reading said stored data in said pixel array. 
     
     
         43 . The method of  claim 42 , further comprising the steps of:
 interpreting said stored data in said pixel array; and   interpreting comprises converting said stored data to a logic state.   
     
     
         44 . A method as in  claim 41 , wherein said data comprises manufacturing information. 
     
     
         45 . A method as in  claim 41 , wherein said data comprises pixel identification information. 
     
     
         46 . A method as in  claim 41 , wherein said data comprises testing information. 
     
     
         47 . A method as in  claim 41 , wherein said data comprises defective pixel information. 
     
     
         48 . A method as in  claim 41 , wherein said step of storing the data comprises determining one or more locations within said pixel array at which data is stored. 
     
     
         49 . A method as in  claim 41 , wherein said disabled photosensor is made disabled by a laser. 
     
     
         50 . A semiconductor chip, comprising:
 a sensor array, comprising:
 a plurality of pixels, wherein a first portion of said pixels are used for providing a signal representative of light incident to said sensor array, wherein a second portion of said pixels are used for providing data as different signal states, wherein said second portion of said pixels comprises pixels with intentionally defective photodiodes to represent data of a first logic state. 
   
     
     
         51 . The semiconductor chip of  claim 50 , wherein said second portion of said pixels used to provide said data further comprises:
 pixels without defective photodiodes to represent data of a second logic state.   
     
     
         52 . The semiconductor chip of  claim 51 , wherein said defective photodiodes are laser modified photodiode.