Post-dry etching cleaning liquid composition and process for fabricating semiconductor device

Abstract

A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

1 . A process for fabricating a semiconductor device, the process comprising:
 a step of cleaning, using a post-dry etching cleaning liquid composition, a substrate that has been subjected to ashing removal of a mask pattern after dry etching through the mask pattern,   wherein the substrate is provided with a wiring material formed from at least one of copper and a copper alloy, and an interlayer insulating film formed from at least one of a low dielectric constant film and silicon oxide, which are exposed by dry etching,   wherein the post-dry etching cleaning liquid composition comprises at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water.   
     
     
         2 . The process for fabricating a semiconductor device according to  claim 1 , wherein the post-dry etching cleaning liquid composition comprises:
 from 0.1 to 5 mass % of at least one type of fluorine compound;   from 0.01 to 1 mass % of glyoxylic acid;   from 0.1 to 10 mass % of at least one type of organic acid salt; and   water.   
     
     
         3 . The process for fabricating a semiconductor device according to  claim 1 , wherein the fluorine compound is ammonium fluoride. 
     
     
         4 . The process for fabricating a semiconductor device according to  claim 1 , wherein the organic acid salt is at least one of ammonium oxalate, ammonium tartrate, ammonium citrate, and ammonium acetate. 
     
     
         5 . The process for fabricating a semiconductor device according to  claim 1 , wherein the cleaning liquid composition further comprises a surfactant. 
     
     
         6 . The process for fabricating a semiconductor device according to  claim 1 , wherein the cleaning liquid composition contains no organic solvent. 
     
     
         7 . A process for fabricating a semiconductor device, the process comprising:
 a step of patterning an insulating film formed above a substrate by dry etching through a mask pattern formed on the insulating film; and   a step of cleaning, as a post-patterning treatment using a post-dry etching cleaning liquid composition, the substrate that has been subjected to the patterning of the insulating films,   wherein the substrate is provided with a wiring material formed from at least one of copper and a copper alloy, and an interlayer insulating film formed from at least one of a low dielectric constant film and silicon oxide, which are exposed by dry etching,   wherein the post-dry etching cleaning liquid composition comprises at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water.   
     
     
         8 . The process for fabricating a semiconductor device according to  claim 7 , wherein the post-dry etching cleaning liquid composition comprises:
 from 0.1 to 5 mass % of at least one type of fluorine compound;   from 0.01 to 1 mass % of glyoxylic acid;   from 0.1 to 10 mass % of at least one type of organic acid salt; and   water.   
     
     
         9 . The process for fabricating a semiconductor device according to  claim 7 , wherein the insulating film is formed using a low dielectric constant material. 
     
     
         10 . The process for fabricating a semiconductor device according to  claim 7 , wherein the insulating film is formed from a low dielectric constant film with an inorganic material film thereon. 
     
     
         11 . The process for fabricating a semiconductor device according to  claim 7 , wherein the mask pattern is formed from an inorganic material. 
     
     
         12 . The process for fabricating a semiconductor device according to  claim 7 , wherein a metal material layer beneath the insulating film is exposed by patterning of the insulating film. 
     
     
         13 . The process for fabricating a semiconductor device according to  claim 7 , wherein after the cleaning step an inner wall of a trench pattern formed by patterning of the insulating film is covered by a conductive thin film, and a conductive material is embedded within the trench pattern via the conductive thin film.