Manufacturing method of thin-film transistor, thin film transistor sheet, and electric circuit

Abstract

A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an insulating area, which is electrode material-repellent, by providing an electrode material-repellent material on the substrate, and c) forming a source electrode on one end of the insulating area and a drain electrode on the other end of the insulating area, by providing an electrode material.

1 . A thin-film transistor comprising a substrate, an insulating area, which is electrode material-repellent, a semiconductor layer, a source electrode and a drain electrode wherein each of the source electrode and the drain electrode, which is comprised of an electrode material, is connected to the semiconductor layer and wherein the drain electrode is separated from the source electrode by the insulating area. 
     
     
         2 . The thin-film transistor of  claim 1 , wherein the insulating area is comprised of a silicone rubber layer. 
     
     
         3 . The thin-film transistor of  claim 1 , wherein the thickness of the insulating area is 0.05 to 10 μm. 
     
     
         4 . The thin-film transistor of  claim 1 , further comprising a light sensitive layer. 
     
     
         5 . A thin-film transistor comprising a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, and an insulating area, which is electrode material-repellent, in that order, wherein the thin-film transistor further comprises a drain electrode and a source electrode in which the drain electrode is separated from the source electrode by the insulating area. 
     
     
         6 . The thin-film transistor of  claim 5 , further comprising a light sensitive layer. 
     
     
         7 . The thin-film transistor comprising two or more of the organic thin-film transistor of  claim 1 . 
     
     
         8 . The thin-film transistor sheet comprising two or more of the organic thin-film transistor of  claim 5 . 
     
     
         9 . The thin-film transistor sheet comprising an insulating area, which is electrode-repellent, a source busline, plural drain electrodes comprised of an electrode material, and plural source electrodes comprised of an electrode material, the source busline being connected to the plural drain electrodes, and each of the plural drain electrodes being connected to a respective pixel electrode, wherein the respective pixel electrode is separated from the source busline by the insulating area.