Semiconductor device having gate electrode connection to wiring layer

Abstract

A semiconductor device includes a semiconductor substrate having an electrode formed above a surface thereof; a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode; a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening; a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening, wherein the second wiring layer includes an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulating resin layer is not less than 5 μm and not more than 60 μm.

1 . A semiconductor device comprising:
 a semiconductor substrate having an electrode formed above a surface thereof;   a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode;   a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening;   a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and   a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening,   wherein the second wiring layer comprises an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulating resin layer is not less than 5 μm and not more than 60 μm.   
   
   
       2 . The semiconductor device according to  claim 1 , wherein a value obtained by dividing a thickness of the first wiring layer by a thickness of the second wiring layer is between 0.3 and 0.5. 
   
   
       3 . The semiconductor device according to  claim 1 , wherein the induction element is a spiral coil. 
   
   
       4 . The semiconductor device according to  claim 2 , wherein the induction element is a spiral coil. 
   
   
       5 . The semiconductor device according to  claim 1 , wherein the first insulating resin layer and the second insulating resin layer are made of a polyimide resin, an epoxy resin, or a silicone resin. 
   
   
       6 . The semiconductor device according to  claim 1 , further comprising a passivation film which is provided on the surface of the semiconductor substrate and has an opening defined at a position corresponding to the electrode,
 wherein the first insulatig resin layer is formed on the passivation film, and   wherein the thickness of the first insulating resin layer is not less than the 1 μm and not more than 30 μm.   
   
   
       7 . A semiconductor device comprising:
 a semiconductor substrate having an electrode formed above a surface thereof;   a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode;   a wiring layer that is formed above the first insulating resin layer and is connected to the electrode through the first opening;   a second insulating resin layer that is formed over the first insulating resin layer and the first wiring layer in the position corresponding to the first wiring layer, the second insulating resin layer having a second opening; and   a second wiring layer that is formed on the second insulating resin layer and has an induction element,   wherein the second wiring layer is connected to the first wiring layer via a junction provided in the second opening, and   a width of the junction is equal to or greater than a line width of the second wiring layer that constructs the induction element.   
   
   
       8 . The semiconductor device according to  claim 7 , wherein the induction element is a spiral coil. 
   
   
       9 . The semiconductor device according to  claim 7 , wherein the first insulating resin layer and the second insulating resin layer are made of a polyimide resin, an epoxy resin, or a silicone resin.