Connecting material, method for manufacturing connecting material, and semiconductor device

Abstract

In a connecting material of the present invention, a Zn series alloy layer is formed on an outermost surface of an Al series alloy layer. In particular, in the connecting material, an Al content of the Al series alloy layer is 99 to 100 wt. % or a Zn content of the Zn series alloy layer is 90 to 100 wt. %. By using this connecting material, the formation of an Al oxide film on the surface of the connecting material at the time of the connection can be suppressed, and preferable wetness that cannot be obtained with the Zn—Al alloy can be obtained. Further, when an Al series alloy layer is left after the connection, since the soft Al functions as a stress buffer material, the high connection reliability can be achieved.

1 . A connecting material, comprising:
 an Al series alloy layer; and   a Zn series alloy layer formed on an outermost surface of the Al series alloy layer.   
     
     
         2 . The connecting material according to  claim 1 ,
 wherein an Al content of the Al series alloy layer is 99 to 100 wt.%.   
     
     
         3 . The connecting material according to  claim 1 ,
 wherein a Zn content of the Zn series alloy layer is 90 to 100 wt.%.   
     
     
         4 . A method for manufacturing a connecting material,
 wherein the connecting material is formed by stacking an Al series alloy layer on a first Zn series alloy layer, stacking a second Zn series alloy layer on the Al series alloy layer, and then performing a clad rolling or pressure forming.   
     
     
         5 . A semiconductor device, comprising:
 a semiconductor element;   a frame connecting the semiconductor element;   a lead whose one end functions as an external terminal;   a wire connecting the other end of the lead and an electrode of the semiconductor element; and   a resin sealing the semiconductor element and the wire,   wherein a connecting material connecting the semiconductor element and the frame includes an Al series alloy layer and a Zn series alloy layer formed on an outermost surface of the Al series alloy layer.   
     
     
         6 . A semiconductor device, comprising:
 a semiconductor element;   a substrate connecting the semiconductor element;   a lead whose one end functions as an external terminal;   a wire connecting the other end of the lead and an electrode of the semiconductor element; and   a metal cap hermetically sealing the semiconductor element and the wire and connected to the substrate,   wherein a connecting material connecting the substrate and the metal cap includes an Al series alloy layer and a Zn series alloy layer formed on an outermost surface of the Al series alloy layer.   
     
     
         7 . The semiconductor device according to  claim 6 ,
 wherein the connecting material connecting the semiconductor element and the substrate includes an Al series alloy layer and a Zn series alloy layer formed on an outermost surface of the Al series alloy layer.   
     
     
         8 . A semiconductor device, comprising:
 a semiconductor element,   wherein a connecting material connecting the semiconductor element and a substrate having the semiconductor element mounted thereon includes an Al series alloy layer and a Zn series alloy layer formed on an outermost surface of the Al series alloy layer.