US2008210551A1PendingUtilityA1

Target for Transparent Conductive Thin Film, Transparent Conductive Thin Film and Manufacturing Method Thereof, Electrode Material for Display, and Organic Electroluminescence Element

Assignee: ABE YOSHIYUKIPriority: May 30, 2002Filed: Dec 18, 2007Published: Sep 4, 2008
Est. expiryMay 30, 2022(expired)· nominal 20-yr term from priority
Inventors:Yoshiyuki Abe
C23C 14/086C23C 14/3414Y10S428/917Y10S428/918B22F 7/04Y10T428/12826Y10T428/12771
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Claims

Abstract

The target for the transparent conductive thin film having indium oxide as its major component and containing tungsten and/or molybdenum, obtained by forming a body of indium oxide powder, and tungsten oxide power and/or molybdenum oxide powder and then heating or sintering the formed body such that the thin film after sputtering has indium oxide as the main component and contains tungsten and/or molybdenum with an atomic ratio (W+Mo)/In of 0.0040 to 0.0470, whereby a transparent conductive thin film having excellent surface smoothness and low specific resistance of 6.0×10 −4 Ω·cm or less, and whose surface smoothness and specific resistance properties do not change even when heated at 170° C. is provided.

Claims

exact text as granted — not AI-modified
1 . A target for a transparent conductive thin film having indium oxide as its major component and containing tungsten and/or molybdenum, obtained by preparing and forming indium oxide powder, and tungsten oxide power and/or molybdenum oxide powder and then heating and sintering the formed body such that the thin film after sputtering has indium oxide as the main component and contains tungsten and/or molybdenum with an atomic ratio (W+Mo)/In of 0.0040 to 0.0470. 
     
     
         2 . A manufacturing method of a transparent conductive thin film using the target described in  claim 1 , comprising the step of manufacturing the transparent conductive thin film on a substrate by a sputtering method, wherein the substrate is kept at 120° C. or lower.

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