Method and apparatus for forming deposited film

Abstract

A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate discharge to decompose the starting gas, wherein, when a self-bias voltage value which is generated at an electrode applied with first electric power reaches a preset threshold, second electric power higher than the first electric power is applied to the electrode to change the self-bias voltage value to another self-bias voltage value larger in absolute value than the threshold, and the deposited film is formed.

1 - 6 . (canceled) 
     
     
         7 . An apparatus for forming a deposited film, comprising:
 a gas introduction unit for introducing a starting gas into a discharge space in a reaction vessel;   an electric power application unit for applying electric power to generate discharge to decompose the starting gas;   a detection unit for detecting a self-bias voltage value which is generated at an electrode applied with the electric power; and   a switching unit for increasing at least one of a first applied electric power, a first flow rate of the starting gas, a first film formation temperature and a first film formation time so as to change the self-bias voltage value to another self-bias voltage value larger in absolute value than the threshold when the self-bias voltage reaches a preset threshold.   
     
     
         8 . The apparatus according to  claim 7 , wherein, when the self-bias voltage value which is generated at the electrode applied with the first electric power is changed from a first self-bias voltage value to a second self-bias voltage value, and then, the second self-bias voltage value reaches the threshold, a second electric power higher than the first electric power is applied to the electrode to change the self-bias voltage value to another self-bias voltage value larger in absolute value than the first self-bias voltage value and the second self-bias voltage value. 
     
     
         9 . An apparatus for forming a deposited film according to  claim 7 , including
 a detecting unit for detecting a self-bias voltage value which is generated at an electrode applied with electric power after introduction of the starting gas at the first flow rate; and   a switching unit for changing the first flow rate of the starting gas to a second flow rate larger than the first flow rate when the self-bias voltage value reaches the threshold.   
     
     
         10 . An apparatus for forming a deposited film according to claim  1  including
 a detecting unit for detecting a self-bias voltage value which is generated at an electrode applied with electric power at a first film formation temperature; and   a switching unit for changing the first film formation temperature to a second film formation temperature higher than the first film formation temperature when the self-bias voltage value reaches the threshold.   
     
     
         11 . An apparatus for forming a deposited film according to  claim 7  including
 a unit for forming the deposited film for a first film formation time and detecting a self-bias voltage value which is generated at an electrode applied with electric power; and   a switching unit for changing the first film formation time to a second film formation time longer than the first film formation time when the self-bias voltage value reaches the threshold.