Monodisperse single-walled carbon nanotube populations and related methods for providing same

Abstract

The present teachings provide methods for providing populations of single-walled carbon nanotubes that are substantially monodisperse in terms of diameter, electronic type, and/or chirality. Also provided are single-walled carbon nanotube populations provided thereby and articles of manufacture including such populations.

1 . A population of single-walled carbon nanotubes wherein greater than about 75% of the single-walled carbon nanotubes have a diameter within less than about 0.5 Å of the mean diameter of the population. 
     
     
         2 . The population of single-walled carbon nanotubes of  claim 1  wherein greater than about 90% of the single-walled carbon nanotubes have a diameter within less than about 0.5 Å of the mean diameter of the population. 
     
     
         3 . The population of single-walled carbon nanotubes of  claim 1  wherein greater than about 75% of the single-walled carbon nanotubes have a diameter within less than about 0.2 Å of the mean diameter of the population. 
     
     
         4 . The population of single-walled carbon nanotubes of  claim 1  wherein greater than about 90% of the single-walled carbon nanotubes have a diameter within less than about 0.2 Å of the mean diameter of the population. 
     
     
         5 . A population of single-walled carbon nanotubes having a diameter greater than about 10 Å, wherein greater than about 70% of the single-walled carbon nanotubes are semiconducting. 
     
     
         6 . The population of  claim 5  wherein the single-walled carbon nanotubes have diameter dimensions ranging from about 11 Å to about 20 Å. 
     
     
         7 . The population of  claim 5  wherein the single-walled carbon nanotubes have diameter dimensions ranging from about 11 Å to about 16 Å. 
     
     
         8 . The population of  claim 5  wherein the single-walled carbon nanotubes are synthesized by a laser ablation process. 
     
     
         9 . The population of  claim 5  wherein greater than about 75% of the single-walled carbon nanotubes are semiconducting. 
     
     
         10 . The population of  claim 5  wherein greater than about 80% of the single-walled carbon nanotubes are semiconducting. 
     
     
         11 . The population of  claim 5  wherein greater than about 85% of the single-walled carbon nanotubes are semiconducting. 
     
     
         12 . (canceled) 
     
     
         13 . (canceled) 
     
     
         14 . A population of single-walled carbon nanotubes wherein greater than about 50% of the single-walled carbon nanotubes are metallic. 
     
     
         15 . The population of single-walled carbon nanotubes of  claim 14  wherein greater than about 75% of the single-walled carbon nanotubes are metallic. 
     
     
         16 . The population of single-walled carbon nanotubes of  claim 14  wherein greater than about 90% of the single-walled carbon nanotubes are metallic. 
     
     
         17 . The population of single-walled carbon nanotubes of  claim 14  wherein greater than about 97% of the single-walled carbon nanotubes are metallic. 
     
     
         18 . The population of single-walled carbon nanotubes of  claim 14  wherein greater than about 99% of the single-walled carbon nanotubes are metallic. 
     
     
         19 - 22 . (canceled) 
     
     
         23 . An article of manufacture comprising the population of single-walled carbon nanotubes of  claim 1 . 
     
     
         24 . The article of manufacture of  claim 23  wherein the article of manufacture is an electronic device, an optical device, or an optoelectronic device. 
     
     
         25 - 50 . (canceled) 
     
     
         51 . An article of manufacture comprising the population of single-walled carbon nanotubes of  claim 5 . 
     
     
         52 . An article of manufacture comprising the population of single-walled carbon nanotubes of  claim 14 .