US2008218207A1PendingUtilityA1
Synchronous first-in/first-out block memory for a field programmable gate array
Est. expiryMay 28, 2023(expired)· nominal 20-yr term from priority
H03K 19/1776H03K 19/1778
45
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
The present invention comprises a field programmable gate array that has a plurality of dedicated first-in/first-out memory logic components. The field programmable gate array includes a plurality of synchronous random access memory blocks that are coupled to a plurality of dedicated first-in/first-out memory logic components and a plurality of random access memory clusters that are programmably coupled to the plurality of dedicated first-in/first-out memory logic components and to the plurality of synchronous random access memory blocks.
Claims
exact text as granted — not AI-modified1 . A field programmable gate array comprising: a plurality of random access memory clusters that store data; a plurality of static random access memory blocks that control transmission of data to and from said plurality of random access memory clusters wherein each of said plurality of random access memory clusters are coupled to one said plurality of static random access memory blocks; and a plurality of dedicated first-in/first-out memory logic components for providing first-in/first out access to said data stored in said plurality of random access memory clusters wherein each of said plurality of plurality of dedicated first-in/first-out memory logic components is coupled to one of said plurality of static random access memory blocks and to each of said plurality of random access memory clusters coupled to said one of said plurality of static random access memory blocks.
Join the waitlist — get patent alerts
Track US2008218207A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.