Protection of polymer surfaces during micro-fabrication

Abstract

A method of protecting a polymeric layer from contamination by a photoresist layer. The method includes: (a) forming a polymeric layer over a substrate; (b) forming a non-photoactive protection layer over the polymeric layer; (c) forming a photoresist layer over the protection layer; (d) exposing the photoresist layer to actinic radiation and developing the photoresist layer to form a patterned photoresist layer, thereby exposing regions of the protection layer; (e) etching through the protection layer and the polymeric layer where the protection layer is not protected by the patterned photoresist layer; (f) removing the patterned photoresist layer in a first removal process; and (g) removing the protection layer in a second removal process different from the first removal process.

1 - 12 . (canceled) 
     
     
         13 . A method comprising:
 forming a polymeric layer on a top surface of substrate;   thermally curing said polymeric layer at a temperature greater than room temperature to cross-link polymers of said polymeric layer;   after said thermally curing said polymeric layer, forming a non-photoactive protection layer on said polymeric layer;   forming a first photoresist layer on said protection layer;   forming an etch stop layer on a bottom surface of said substrate;   after forming said etch stop layer, removing said first photoresist layer;   forming a second photoresist layer on said protection layer;   exposing said second photoresist layer to actinic radiation and developing said photoresist layer to form a patterned second photoresist layer, thereby exposing regions of said protection layer;   etching through said protection layer and said polymeric layer where said protection layer is not protected by said patterned second photoresist layer to expose regions of said substrate;   removing said patterned second photoresist layer;   forming a third photoresist layer on said protection layer;   exposing said third photoresist layer to actinic radiation and developing said third photoresist layer to form a patterned third photoresist layer, thereby exposing said regions of said substrate;   etching entirely through said substrate in said exposed regions of said substrate;   removing said etch stop layer;   removing said patterned third photoresist layer;   removing said protection layer;   wherein said first photoresist layer, said second photoresist layer, said third photoresist layer or combinations thereof independently comprise positive photoresist;   wherein said protection layer comprises polyvinyl alcohol;   wherein said removing said protection layer comprises dissolving the protection layer in water;   wherein said patterned second and said patterned third photoresist layers are removed by dissolution in an organic solvent;   wherein said polymeric layer comprises a polymer selected from the group consisting of polyarylenes, polyarylene ethers, polyarylene ether ketones, polyimides, polyazoles, polyquinolines, polyacrylates, polystyrenes, acrylate/styrene copolymers and polynorbornenes;   wherein said polymeric layer is cross-linked by covalent bonding moieties incorporated into said polymer, hydrogen-bonding moieties incorporated into said polymer, covalent bonding moieties as endgroups of said polymer, hydrogen bonding moieties as endgroups of said polymer, by cross-linking agents added to said polymer, or by combinations thereof;   wherein said protection layer comprises a material selected from the group consisting of polyvinyl alcohol, polydimethyl glutarimide, polyvinylacetate, polyisopropylacrylamide, polyvinyl alcohol/polyethylene copolymer, polyvinyl alcohol/polypropylene copolymer, polyhydroxybutyrate, polylactones and polylactides;   wherein said first photoresist layer is removed by dissolution in an aqueous base; and   wherein said first, patterned second and patterned third photoresist layers are removed by dissolution in an organic solvent.   
     
     
         14 - 23 . (canceled)