Systems and methods for efficient slurry application for chemical mechanical polishing

Abstract

An embodiment relates generally to a chemical mechanical polishing apparatus. The apparatus includes a platen adapted to receive a wafer to be chemical-mechanically polished and a polishing pad configured to polish the wafer. The apparatus also includes a slurry feed line configured to provide slurry to the polishing pad and at least one slurry dispensing outlet coupled to the slurry feed line and configured to dispense slurry as a mist of small droplets ranging from submicron to about 500 microns.

1 . A chemical mechanical polishing apparatus comprising:
 a platen adapted to receive a wafer to be chemical-mechanically polished;   a polishing pad configured to polish the wafer;   a slurry feed line configured to provide slurry to the polishing pad; and   at least one slurry dispensing outlet coupled to the slurry feed line and configured to dispense slurry as a mist of small droplets ranging from submicron to about 500 microns.   
   
   
       2 . The chemical mechanical polishing apparatus of  claim 1 , wherein the at least one slurry dispensing outlet comprises an atomizer. 
   
   
       3 . The chemical mechanical polishing apparatus of  claim 2 , wherein the atomizer is an air atomizer. 
   
   
       4 . The chemical mechanical polishing apparatus of  claim 2 , wherein the atomizer is an ultrasonic atomizer. 
   
   
       5 . The chemical mechanical polishing apparatus of  claim 1 , wherein the at least one slurry dispensing outlet further comprises a slit. 
   
   
       6 . The chemical mechanical polishing apparatus of  claim 5 , wherein the slit is configured to be substantially 10 microns wide and one millimeter wide. 
   
   
       7 . The chemical mechanical polishing apparatus of  claim 6 , further comprising a pressure unit configured to pressurize the slurry to be forced out of the slit. 
   
   
       8 . A chemical mechanical polishing apparatus comprising:
 a platen adapted to receive a wafer to be chemical-mechanically polished;   a polishing pad configured to polish the wafer;   a slurry feeder configured to dispense slurry onto the polishing pad; and   multiple slurry outlets, each slurry outlet coupled to the slurry feed line and configured to dispense slurry as a mist of small droplets ranging from submicron to about 500 microns on the polishing pad.   
   
   
       9 . The chemical mechanical polishing apparatus of  claim 8 , wherein the at least one slurry dispensing outlet comprises an atomizer. 
   
   
       10 . The chemical mechanical polishing apparatus of  claim 9 , wherein the atomizer is an air atomizer. 
   
   
       11 . The chemical mechanical polishing apparatus of  claim 9 , wherein the atomizer is an ultrasonic atomizer. 
   
   
       12 . A method of chemical mechanical polishing, comprising:
 providing slurry to a polishing pad;   applying the polishing pad to a wafer; and   dispensing the slurry to the polishing pad as a mist of small droplets, each droplet ranging from substantially submicron to 500 microns.   
   
   
       13 . The method of  claim 12 , wherein dispensing the slurry further comprises a slurry outlet device. 
   
   
       14 . The method of  claim 13 , wherein the slurry outlet device comprises a gap substantially one millimeter in length and 10 microns wide. 
   
   
       15 . The method of  claim 14 , further comprises pressurizing the slurry through the gap using air. 
   
   
       16 . The method of  claim 14  further comprises pressuring the slurry through the gap using ultrasound.