Etchant for signal wire and method of manufacturing thin film transistor array panel using etchant

Abstract

Gate lines including a lower Al—Nd layer and an upper MoW layer, data lines including a MoW layer, and pixel electrodes including an IZO layer are patterned using a single etchant. The etchant contains a phosphoric acid of about 50-60%, a nitric acid of about 6-10%, an acetic acid of about 15-25%, a stabilizer of about 2-5% stabilizer, and deionized water. The stabilizer includes oxy-hydride inorganic acid represented by M(OH) x L y , where M includes at least one of Zn, Sn, Cr, Al, Ba, Fe, Ti, Si and B, L includes at least one of H 2 O, NH 3 , CN and NH 2 R (where R is alkyl group), X is 2 or 3, and Y is 0, 1, 2 or 3.

1 . An etchant for a signal wire, the etchant comprising: a phosphoric acid of about 50-60%; a nitric acid of about 6-10%; an acetic acid of about 15-25%; a stabilizer of about 2-5% stabilizer; and deionized water, wherein the stabilizer includes oxy-hydride inorganic acid represented by M(OH) x L y , where M includes at least one of Zn, Sn, Cr, Al, Ba, Fe, Ti, Si and B, L includes at least one of H 2 O, NH 3 , CN and NH 2 R (where R is alkyl group), X is 2 or 3, and Y is 0, 1, 2 or 3. 
     
     
         2 . An etchant of  claim 1 , wherein the etchant is used for patterning an Al or Al alloy layer, a Mo or Mo alloy layer, and multiple layers including an Al or Al alloy layer and a Mo or Mo alloy layer. 
     
     
         3 . An etchant of  claim 1 , wherein the etchant is used for patterning an IZO layer. 
     
     
         4 . An etchant for a signal wire, the etchant comprising: a phosphoric acid of about 65-75%; a nitric acid of about 0.5-4%; an acetic acid of about 9-13%; a stabilizer of about 2-5% stabilizer; and deionized water, wherein the stabilizer includes oxy-hydride inorganic acid represented by M(OH) x L y , where M includes at least one of Zn, Sn, Cr, Al, Ba, Fe, Ti, Si and B, L includes at least one of H 2 O, NH 3 , CN and NH 2 R (where R is alkyl group), X is 2 or 3, and Y is 0, 1, 2 or 3. 
     
     
         5 . An etchant of  claim 4 , wherein the etchant is used for patterning an Al or Al alloy layer, a Mo or Mo alloy layer, and multiple layers including an Al or Al alloy layer and a Mo or Mo alloy layer. 
     
     
         6 . An etchant of  claim 4 , wherein the etchant is used for patterning an IZO layer. 
     
     
         7 . An etchant of  claim 4 , wherein the etchant is used for patterning multiple layers including an Al or Al alloy layer, a Mo layer, and an IZO layer. 
     
     
         8 . An etchant of  claim 4 , wherein the etchant is used for patterning multiple layers including a Mo layer, an Al or Al alloy layer, and a Mo layer deposited in sequence.