Photoluminescent material of light-emitting diode package structure

Abstract

An LED package structure including a carrier, an LED chip, an encapsulant and a PL material is provided, wherein the LED chip is disposed on the carrier for emitting light. The encapsulant encapsulates the LED chip. The PL material is distributed in the encapsulant. The PL material is suitable for being excited by the light emitted from the LED chip and scattering the light. Moreover, the present invention provides a novel PL material with a molecular formula of W m Mo n (Y,Ce,Tb,Gd,Sb) 3+t+u (Al,Ga,Tl,In,B) 5+u+2v (O,S,Se) 12+2t+3u+3v+3m+3n :Ce 3+ ,Tb 3+ , wherein 0<t<5 and 0<m, n, u, v<15.

1 . A photoluminescent material with a molecular formula of W m Mo n (Y,Ce,Tb,Gd,Sb) 3+t+u (Al,Ga,Tl,In,B) 5+u+2v (O,S,Se) 12+2t+3u+3v+3m+3n :Ce 3+ ,Tb 3+ , wherein 0<t<5 and 0<m, n, u, v<15. 
     
     
         2 . The photoluminescent material of  claim 1  with the molecular formula of W m Mo n (Y,Ce,Tb,Gd,Sb) 3+t+u (Al,Ga,Tl,In,B) 5+u+2v (O,S,Se) 12+2t+3u+3v+3m+3n :Ce 3+ ,Tb 3+ , wherein 0<t<5 and 0<m, n, u, v<15, is a mixture. 
     
     
         3 . The photoluminescent material of  claim 1  with the molecular formula of W m Mo n (Y,Ce,Tb,Gd,Sb) 3+t+u (Al,Ga,Tl,In,B) 5+u+2v (O,S,Se) 12+2t+3u+3v+3m+3n :Ce 3+ ,Tb 3+ , wherein 0<t<5 and 0<m, n, u, v<15, is a sinter.