Formation of metal oxide film

Abstract

A film formation method for forming a metal oxide film includes loading a target object into a process container configured to maintain a vacuum therein; supplying a film formation source material into the process container; supplying an oxidizing agent into the process container; and causing the film formation source material and the oxidizing agent to react with each other, thereby forming a metal oxide film on the target object. The film formation source material is an organic metal compound containing a metal of the metal oxide film and prepared by mixing a first organic metal compound that is solid at room temperature and has a higher vapor pressure with a second organic metal compound that is liquid at room temperature such that the organic metal compound is liquid at room temperature.

1 . A film formation source material for forming a metal oxide film on a target object, wherein the film formation source material is an organic metal compound containing a metal of the metal oxide film and prepared by mixing a first organic metal compound that is solid at room temperature and has a higher vapor pressure with a second organic metal compound that is liquid at room temperature such that the organic metal compound is liquid at room temperature. 
     
     
         2 . The film formation source material according  claim 1 , wherein the organic metal compound is an amine family material. 
     
     
         3 . The film formation source material according  claim 2 , wherein the metal is Hf or Zr. 
     
     
         4 . The film formation source material according  claim 3 , wherein the metal is Hf, the first organic metal compound is tetrakisdimethylamino hafnium (TDMAH), and the second organic metal compound is tetrakisethylmethylamino hafnium (TEMAH) or tetrakisdiethylamino hafnium (TDEAH), or wherein the metal is Zr, the first organic metal compound is tetrakisdimethylamino zirconium (TDMAZ), and the second organic metal compound is tetrakisethylmethylamino zirconium (TEMAZ) or tetrakisdiethylamino zirconium (TDEAZ). 
     
     
         5 . The film formation source material according  claim 1 , wherein the second organic metal compound is set to be 50 mass % or less relative to 100 mass % of the first organic metal compound. 
     
     
         6 . The film formation source material according  claim 5 , wherein the second organic metal compound is set to be 10 mass % or less relative to 100 mass % of the first organic metal compound. 
     
     
         7 . The film formation source material according  claim 6 , wherein the second organic metal compound is set to be 5 to 10 mass % relative to 100 mass % of the first organic metal compound. 
     
     
         8 . A film formation method for forming a metal oxide film, the film formation method comprising.
 loading a target object into a process container configured to maintain a vacuum therein; supplying a film formation source material into the process container; supplying an oxidizing agent into the process container; and causing the film formation source material and the oxidizing agent to react with each other, thereby forming a metal oxide film on the target object,   wherein the film formation source material is an organic metal compound containing a metal of the metal oxide film and prepared by mixing a first organic metal compound that is solid at room temperature and has a higher vapor pressure with a second organic metal compound that is liquid at room temperature such that the organic metal compound is liquid at room temperature.   
     
     
         9 . The film formation method according  claim 8 , wherein the organic metal compound is an amine family material. 
     
     
         10 . The film formation method according  claim 9 , wherein the metal is Hf or Zr. 
     
     
         11 . The film formation method according  claim 10 , wherein the metal is Hf, the first organic metal compound is tetrakisdimethylamino hafnium (TDMAH), and the second organic metal compound is tetrakisethylmethylamino hafnium (TEMAH) or tetrakisdiethylamino hafnium (TDEAH), or wherein the metal is Zr, the first organic metal compound is tetrakisdimethylamino zirconium (TDMAZ), and the second organic metal compound is tetrakisethylmethylamino zirconium (TEMAZ) or tetrakisdiethylamino zirconium (TDEAZ). 
     
     
         12 . The film formation method according  claim 8 , wherein the second organic metal compound is set to be 50 mass % or less relative to 100 mass % of the first organic metal compound. 
     
     
         13 . The film formation method according  claim 12 , wherein the second organic metal compound is set to be 10 mass % or less relative to 100 mass % of the first organic metal compound. 
     
     
         14 . The film formation method according  claim 13 , wherein the second organic metal compound is set to be 5 to 10 mass % relative to 100 mass % of the first organic metal compound. 
     
     
         15 . The film formation method according  claim 8 , wherein the method is arranged to alternately perform, a plurality of times, supplying the film formation source material into the process container and supplying the oxidizing agent into the process container. 
     
     
         16 . The film formation method according  claim 15 , wherein the method comprises removing residual gas from inside the process container between supplying the film formation source material into the process container and supplying the oxidizing agent into the process container. 
     
     
         17 . The film formation method according  claim 16 , wherein the method comprises supplying a purge gas into the process container while vacuum-exhausting the process container, thereby removing residual gas from inside the process container. 
     
     
         18 . A film formation apparatus for forming a metal oxide film on target objects, the film formation apparatus comprising:
 a process container having a vertical and cylindrical shape and configured to maintain a vacuum therein;   a holder configured to hold the target objects stacked at intervals inside the process container;   a heating device disposed around the process container;   a film formation source material supply mechanism configured to supply a film formation source material into the process container, wherein the film formation source material is an organic metal compound containing a metal of the metal oxide film and prepared by mixing a first organic metal compound that is solid at room temperature and has a higher vapor pressure with a second organic metal compound that is liquid at room temperature such that the organic metal compound is liquid at room temperature;   an oxygen-containing gas supply mechanism configured to supply an oxygen-containing gas into the process container; and   a control mechanism configured to control supply of the film formation source material and the oxygen-containing gas.   
     
     
         19 . The film formation apparatus according  claim 18 , wherein the control mechanism is preset to control the film formation source material supply mechanism and the oxygen-containing gas supply mechanism to alternately perform, a plurality of times, supplying the film formation source material into the process container and supplying the oxidizing agent into the process container. 
     
     
         20 . The film formation apparatus according  claim 19 , wherein the control mechanism is preset to perform control for removing residual gas from inside the process container between supplying the film formation source material into the process container and supplying the oxidizing agent into the process container.