Fabrication method of semiconductor integrated circuit device

Abstract

In the fabrication of a semiconductor integrated circuit device, a 2D-3D inspection technique for solder printed on a substrate is provided which permits easy preparation of data and easy visual confirmation of a defective portion. In a substrate inspecting step, first, a 3D inspection is performed, followed by execution of 2D inspection, whereby a 2D picked-up image of the portion of a pad determined to be defective can be displayed on a larger scale simultaneously with the end of inspection, thereby providing an environment for efficient visual confirmation of the defect. Further, by subjecting a raw substrate to measurement at the time of preparing inspection data, a relation between an original height measurement reference generated automatically by the inspection system and the height of a pad upper surface is checked, whereby it is possible to measure the height and volume of printed solder based on the pad upper surface.

1 . A method of fabricating a semiconductor integrated circuit device, comprising the steps of:
 (a) printing solder over a substrate;   (b) inspecting said solder printed over said substrate; and   (c) mounting circuit parts over said solder printed over said substrate,   wherein the step(b) includes a three dimensions-inspecting and a two dimensions-inspecting, and   wherein said three dimensions-inspecting and said two dimensions-inspecting are performed by using a common camera which is capable of switching between light sources and can illuminate a different light between said three dimensions-inspecting and said two dimensions-inspecting, thereby to evaluate said solder by using photographic images taken by said common camera.   
   
   
       2 . A method of fabricating a semiconductor integrated circuit device according to  claim 1 , wherein said two dimensions-inspecting is performed after said three dimensions-inspecting. 
   
   
       3 . A method of fabricating a semiconductor integrated circuit device according to  claim 2 , wherein said common camera is a CMOS area camera. 
   
   
       4 . A method of fabricating a semiconductor integrated circuit device according to  claim 2 , wherein said light sources are LED illumination lamps.