Charge transfer device

Abstract

A charge transfer device 1 has an P-type region, an N-type well provided to the surficial portion of the P-type region, and transfer electrodes having P-type conductivity, provided over the N-type substrate while placing an insulating film in between.

1 . A charge transfer device comprising:
 a P-type region;   an N-type well provided in said P-type region; and   transfer electrodes provided over said N-type well while placing an insulating film in between, each of said transfer electrodes having a storage electrode and a barrier electrode, said storage electrode having a P-type polysilicon that is formed on said insulating film.   
   
   
       2 . The charge transfer device as claimed in  claim 1 ,
 wherein said storage electrodes and barrier electrodes are formed from a single polysilicon layer.   
   
   
       3 . The charge transfer device as claimed in  claim 1 ,
 wherein said storage electrode and said barrier electrode are joined to each other.   
   
   
       4 . The charge transfer device as claimed in  claim 1 ,
 wherein said storage electrode further comprises a conductive material that includes metal formed on said P-type polysilicon.   
   
   
       5 . The charge transfer device as claimed in  claim 1 ,
 wherein said barrier electrode has a P-type polysilicon.   
   
   
       6 . The charge transfer device as claimed in  claim 1 ,
 wherein said barrier electrode has an N-type polysilicon.   
   
   
       7 . The charge transfer device as claimed in  claim 1 ,
 wherein said barrier electrode has a polysilicon and a conductive material that includes metal formed thereon.