Light emitting device processes

Abstract

Light-emitting devices, and related components, processes, systems and methods are disclosed.

1 . A method of forming light emitting devices comprising:
 providing a submount supporting a plurality of multi-layer stacks comprising a sacrificial layer and a light-generating region, wherein the multi-layer stacks have substrate portions disposed thereover;   at least partially decomposing the sacrificial layer of the multi-layer stacks on an individual basis;   separating the multi-layer stacks from the substrate portions to expose n-type upper surfaces of the multi-layer stacks; and   forming light emitting devices from the multi-layer stacks.   
     
     
         2 . The method of  claim 1 , wherein at least partially decomposing the semiconductor layer includes exposing the sacrificial layer of the multi-layer stacks to electromagnetic radiation. 
     
     
         3 . The method of  claim 1 , wherein at least 50% of the total amount of light generated by the light-generating region that emerges from the light emitting devices is emitted through the n-type upper surface. 
     
     
         4 . The method of  claim 1 , wherein the light emitting devices have a side of between 0.5 mm and 1 cm. 
     
     
         5 . The method of  claim 1 , comprising simultaneously decomposing the sacrificial layer of the multi-layer stacks on an individual basis. 
     
     
         6 . The method of  claim 1 , comprising sequentially decomposing the sacrificial layer of the multi-layer stacks on an individual basis. 
     
     
         7 . The method of  claim 1 , further comprising disposing a phosphor material layer over the exposed n-type upper surfaces. 
     
     
         8 . The method of  claim 7 , wherein the phosphor material layer is compressed. 
     
     
         9 . The method of  claim 7 , wherein the phosphor material layer has a thickness uniformity of less than about 20%. 
     
     
         10 . The method of  claim 1 , wherein the sacrificial layer comprises a semiconductor material. 
     
     
         11 . A method of forming light emitting devices comprising:
 providing a submount supporting a plurality of multi-layer stacks comprising a sacrificial layer and a light-generating region, wherein the multi-layer stacks have substrate portions disposed thereover;   at least partially decomposing the sacrificial layer within the multi-layer stacks on an individual basis;   separating the multi-layer stacks from the substrate portions to expose upper surfaces of the multi-layer stacks;   processing the upper surfaces to enhance light extraction; and   forming light emitting devices from the multi-layer stacks.   
     
     
         12 . The method of  claim 11 , wherein at least partially decomposing the semiconductor layer includes exposing the sacrificial layer of the multi-layer stacks to electromagnetic radiation. 
     
     
         13 . The method of  claim 11 , wherein at least 50% of the total amount of light generated by the light-generating region that emerges from the light emitting devices is emitted through the n-type upper surface. 
     
     
         14 . The method of  claim 11 , wherein the light emitting devices have a side of at least 1 mm. 
     
     
         15 . The method of  claim 11 , comprising simultaneously decomposing the sacrificial layer of the multi-layer stacks on an individual basis. 
     
     
         16 . The method of  claim 11 , comprising sequentially decomposing the sacrificial layer of the multi-layer stacks on an individual basis. 
     
     
         17 . The method of  claim 11 , further comprising disposing a phosphor material layer over the upper surfaces. 
     
     
         18 . The method of  claim 17 , wherein the phosphor material layer has a thickness uniformity of less than about 20%. 
     
     
         19 . The method of  claim 11 , wherein the sacrificial layer comprises a semiconductor material. 
     
     
         20 . The method of  claim 11 , wherein the light emitting devices have a side of between 0.5 mm and 1 cm.