Deposition Apparatuses

Abstract

The invention includes deposition methods and apparatuses which can be utilized during atomic layer deposition or chemical vapor deposition. A heated surface is provided between a stack of semiconductor substrates and a precursor inlet, and configured so that problematic side reactions occur proximate the heated surface rather than proximate the semiconductor substrates. The precursor inlet can be one of a plurality of precursor inlets, and the heated surface can be one of a plurality of heated surfaces.

1 - 28 . (canceled) 
   
   
       29 . A deposition apparatus comprising:
 a reaction chamber;   a substrate holder configured for retaining at least one semiconductor substrate within the chamber;   an inlet port configured for injecting fluid into the reaction chamber, the inlet port being a last port along a path of the injected fluid;   a heated surface within the reaction chamber and proximate the inlet port;   wherein the inlet port, the heated surface and the substrate holder are configured such that the bulk flow of one or more precursors into the reaction chamber is through the inlet port and directed by the inlet port to interact with the heated surface prior to reaching any substrate retained by the substrate holder; and   wherein the heated surface is a surface of a plate provided in the reaction chamber between the inlet port and the substrate holder.   
   
   
       30 . The apparatus of  claim 29  wherein the heated surface of the plate curves at least partially around the inlet port. 
   
   
       31 . (canceled) 
   
   
       32 . A deposition apparatus comprising:
 a reaction chamber;   a substrate holder configured for retaining at least one semiconductor substrate within the chamber;   an inlet port configured for injecting fluid into the reaction chamber, the inlet port being a last port along a path of the injected fluid;   a heated surface within the reaction chamber and proximate the inlet port;   wherein the inlet port, the heated surface and the substrate holder are configured such that the bulk flow of one or more precursors into the reaction chamber is through the inlet port and directed by the inlet port to interact with the heated surface prior to reaching any substrate retained by the substrate holder; and   wherein:
 the inlet port is an orifice in sidewall of an inlet nozzle; 
 a tube substantially entirely surrounds the inlet nozzle such that the inlet port directs the bulk flow of the one or more precursors into a wall of the tube; 
 the tube has at least one opening extending therethrough into the chamber; and 
 the wall of the tube is the heated surface. 
   
   
   
       33 . The apparatus of  claim 29  wherein the substrate holder is configured to retain a batch of two or more semiconductor wafers within the reaction chamber. 
   
   
       34 . A deposition apparatus, comprising:
 a reaction chamber;   a substrate holder configured for retaining a plurality of semiconductor substrates within the chamber;   a plurality of inlet ports configured for injecting fluid into the reaction chamber, the inlet ports each being a last port along a path of the injected fluid that passes therethrough into the chamber;   a plurality of heated surfaces within the reaction chamber and proximate the inlet ports;   wherein the inlet ports, the heated surfaces and the substrate holder are configured such that the bulk flow of one or more precursors into the reaction chamber is through the inlet ports and directed by the inlet ports to interact with the heated surfaces prior to reaching substrates retained by the substrate holder; and   wherein the heated surfaces are surfaces of plates provided in the reaction chamber between the inlet ports and the substrate holder, the plates being in one-to-one correspondence with the inlet ports.   
   
   
       35 . A deposition apparatus, comprising:
 a reaction chamber;   a substrate holder configured for retaining at least one semiconductor substrate within the chamber;   an inlet port configured for injecting fluid into the reaction chamber, the inlet port being a last port along a path of the injected fluid;   a heated surface within the reaction chamber and proximate the inlet port;   wherein the inlet port, the heated surface and the substrate holder are configured such that the bulk flow of one or more precursors into the reaction chamber is through the inlet port and directed by the inlet port to interact with the heated surface prior to reaching any substrate retained by the substrate holder; and   wherein the heated surface is a surface of a plate provided in the reaction chamber between the inlet port and the substrate holder, the plate having a curved surface that extends only partially around the inlet port.