Angle control of multi-cavity molded components for mems and nems group assembly

Abstract

A method of making a mold includes forming spaced mold cavities in a mold body. The mold cavities include geometrically similar portions, but have respective depths below an initial reference surface that vary as a function of position along a particular direction. The mold cavities can be formed using anisotropic etching of preferred crystal directions in single crystal materials such as silicon. A portion of the mold material adjacent the initial reference surface is removed to expose a new reference surface at a tilt angle with respect to the initial reference surface. The modified mold cavities have their respective axes at a new desired tilt angle relative to the new reference surface.

1 - 14 . (canceled) 
   
   
       15 . The structured use of a constant change in part depth when creating molded or growth molded otherwise identical in at least one structural element parts for a multiple cavity mold such that a plane can intersect the lowermost portion of said parts, said plane being the tilt angle plane of the final mold opening with respect to the geometry of the parts. 
   
   
       16 . The invention of  claim 15  in which the mold is subsequently machined or ground so as to form a new mold with the plane angle at the mold opening. 
   
   
       17 . The mold or growth mold of  claim 15  on which a barrier film has been attached which can prevent the etching process to free up the molded part from causing damage to the bond or other structures attached to the part of adjacent to it. 
   
   
       18 . A mold in which the part is released by patterning the mold on the back side away from the part side such that the minimum material is removed sufficient to free up the part while supporting the structure and any barrier film designed to limit the distribution of the etchant. 
   
   
       19 - 22 . (canceled) 
   
   
       23 . An alignment system for bonding two wafers at specific bond points with a material which has a specific bonding or welding temperature with a combination of two more sets of self-terminated pits and alignment shapes such that at or near the bond pressure and temperature the bondable elements are brought into contact by the deformation of the alignment shape or deformable coating or both. 
   
   
       24 . An assembly means for bonding wafers of parts in which one set are cantilevers such that a preformed jig is used to support the cantilevers for the bonding step. 
   
   
       25 . A method as in  24  in which the combination of the jig and the wafer carrying bondable elements to be joined to a cantilever cause the cantilever to bend up or down creating a wedge of the bond material and leaving the part with a characteristic angle due to the bond wedge. 
   
   
       26 - 28 . (canceled) 
   
   
       29 . A molded or inserted material means in which a first means is used to mold a base part and then the wafer is prepared by any means including grinding, polishing, compress, or chemical etch and a new pattern etched into the side opposite the first molded parts and/or inserted parts so that these parts form a seed source to fill up the cavities etched on the opposite side from the beginning parts so as to form an complex integral assembly suitable for wafer scale assembly or other use. 
   
   
       30 . The method as in  29  wherein the parts are made of polycrystalline or single crystal diamond and the wafers are silicon. 
   
   
       31 . The method of  29  in which the etched cavities are decreased in diameter by growth of a native oxide by any means on the silicon. 
   
   
       32 . The method of  29  in which a diamond material is first cleaned by use of a SF6 plasma gas etch to remove any remanant silicon carbide. 
   
   
       33 . The method of  29  in which the part material is boron nitride, or silicon nitride or silicon carbide. 
   
   
       34 - 41 . (canceled)