Process of cleaning a substrate for microelectronic applications including directing mechanical energy through a fluid bath and apparatus of same

Abstract

An apparatus of cleaning a workpiece for microelectronic applications can include fixture to help position the workpiece. In one aspect the apparatus can include a tank and a transducer. In another aspect the apparatus can include a nozzle. The fixture, the tank, the nozzle, or any combination thereof can include an electrostatic dissipative material having a volume resistivity R v not less than 1E5 ohm-cm and not greater than 1E11 ohm-cm. In a particular embodiment, a process of cleaning includes directing mechanical energy through a fluid to help overcome energy binding a contaminant to the workpiece.

1 . A method of cleaning a workpiece for microelectronic applications, comprising:
 providing a workpiece in a fluid bath contained in a tanks the workpiece having first and second opposite major surfaces and a plurality of features formed on the first major surface, the features having a minimum feature size of not greater than 10.0 microns, wherein the tank is comprised of electrostatic dissipative material having a volume resistivity R v , not less than 1E5 ohm-cm and not greater than 1E11 ohm-cm; and   directing mechanical energy through the fluid bath to help overcome an energy binding a contaminant to the first major surface of the workpiece.   
     
     
         2 . The method of  claim 1 , wherein the tank is formed of a plurality of walls defining therein an internal volume, the walls having an outer surface portion that is comprised of said electrostatic dissipative material. 
     
     
         3 . (canceled) 
     
     
         4 . The method of  claim 2 , wherein the walls include a base and the outer surface portion is in the form of a skin layer, the skin layer forming the exterior portion of the walls and comprised of said electrostatic dissipative material. 
     
     
         5 . The method of  claim 4 , wherein the skin layer is not less than 10 um thick. 
     
     
         6 - 14 . (canceled) 
     
     
         15 . The method of  claim 1 , further comprising placing the workpiece on a fixture in the fluid bath, the fixture being in communication with the tank to permit dissipation of electrostatic charges to the tank. 
     
     
         16 . The method of  claim 15 , wherein the fixture comprises electrostatic dissipative material having a volume resistivity R v , not less than 1E5 ohm-cm and not greater than 1E11 ohm-cm. 
     
     
         17 - 22 . (canceled) 
     
     
         23 . The method of  claim 1 , wherein directing mechanical energy through the fluid includes directing mechanical energy having a frequency in a range of approximately 20 to approximately 2000 kHz. 
     
     
         24 - 25 . (canceled) 
     
     
         26 . A method for cleaning a workpiece for microelectronic applications, comprising:
 providing a workpiece in contact with a fluid and a fixture, the workpiece having first and second opposite major surfaces and a plurality of features formed on the first major surface, the features having a minimum feature size of not greater than 10 microns, wherein the fluid is in contact with the first major surface, the fixture is in contact with the second major surface, and the fixture is comprised of electrostatic dissipative material having a volume resistivity R v , not less than 1E5 ohm-cm and not greater than 1E11 ohm-cm; and   directing mechanical energy through the fluid to help overcome an energy binding a contaminant to the first major surface of the workpiece.   
     
     
         27 . The method of  claim 26 , wherein the fixture further includes an outer surface portion adjacent to the second surface of the workpiece that is comprised of said electrostatic dissipative material. 
     
     
         28 . (canceled) 
     
     
         29 . The method of  claim 27 , wherein the fixture include a base and the outer surface portion is in the form of a skin layer, the skin layer forming the exterior portion and comprised of said electrostatic dissipative material. 
     
     
         30 - 39 . (canceled) 
     
     
         40 . The method of  claim 26 , further comprising placing the workpiece on the fixture in a tank, the fixture being in communication with the tank to permit dissipation of electrostatic charges to the tank. 
     
     
         41 - 50 . (canceled) 
     
     
         51 . An apparatus for cleaning a workpiece for microelectronic applications, the apparatus including a tank comprising a plurality of walls defining therein an internal volume, the walls have an outer surface portion comprising electrostatic dissipative material having a volume resistivity R v , not less than 1E5 ohm-cm and not greater than 1E11 ohm-cm. 
     
     
         52 - 53 . (canceled) 
     
     
         54 . The apparatus of  claim 51 , wherein the outer surface portion has a density not less than 95% of theoretical density. 
     
     
         55 . The apparatus of  claim 51 , wherein the outer surface portion has a surface roughness R a  not greater than 100 microns. 
     
     
         56 - 57 . (canceled) 
     
     
         58 . The apparatus of  claim 51 , further comprising a surface resistance uniformity having a relative standard deviation of not greater than about 25%. 
     
     
         59 . (canceled) 
     
     
         60 . The apparatus of  claim 51 , further comprising a decay time value of less than about 500 ms. 
     
     
         61 . (canceled) 
     
     
         62 . The apparatus of  claim 51 , further comprising a dielectric constant of not greater than about 200. 
     
     
         63 . (canceled) 
     
     
         64 . The apparatus of  claim 51 , further comprising a dissipation factor of greater than about 0.5. 
     
     
         65 . An apparatus of cleaning a workpiece for microelectronic applications, the apparatus including a fixture having an outer surface portion comprising electrostatic dissipative material having a volume resistivity R v  not less than 1E5 ohm-cm and not greater than 1E11 ohm-cm. 
     
     
         66 . The apparatus of  claim 65 , wherein the fixture include a base and the outer surface portion is in the form of a skin layer. 
     
     
         67 . The apparatus of  claim 65 , wherein the outer surface portion comprises silicon carbide. 
     
     
         68 . The apparatus of  claim 65 , wherein the outer surface portion has a density not less than 95% of theoretical density. 
     
     
         69 . The apparatus of  claim 65 , wherein the outer surface portion has a surface roughness R a  not greater than 100 microns. 
     
     
         70 - 71 . (canceled) 
     
     
         72 . The apparatus of  claim 65 , further comprising a surface resistance uniformity having a relative standard deviation of not greater than about 25%. 
     
     
         73 . (canceled) 
     
     
         74 . The apparatus of  claim 65 , further comprising a decay time value of less than about 500 ms. 
     
     
         75 - 100 . (canceled)