Semiconductor image device package with die receiving through-hole and method of the same

Abstract

The present invention discloses a structure of package comprising: a substrate with a die receiving through hole, a connecting through hole structure and a first contact pad; a die having micro lens area disposed within the die receiving through hole; a transparent cover covers the micro lens area; a surrounding material formed under the die and filled in the gap between the die and sidewall of the die receiving though hole; a dielectric layer formed on the die and the substrate; a re-distribution layer (RDL) formed on the dielectric layer and coupled to the first contact pad; a protection layer formed over the RDL; and a second contact pad formed at the lower surface of the substrate and under the connecting through hole structure.

1 . A method for forming semiconductor device package comprising:
 providing a substrate with die receiving through holes, connecting through hole structure and contact metal pads;   printing patterned glues on a die redistribution tool;   redistributing desired dice having micro lens area on said die redistribution tool with desired pitch by a pick and place fine alignment system;   bonding said substrate to said die redistribution tool;   refilling elastic core paste material into the space between said dice and sidewall of the through hole and back side of said dice;   separating said die redistribution tool;   coating a dielectric layer on the active surface of said die and upper surface of said substrate;   forming openings to expose micro lens, contact pads of said dice and substrate;   forming at least one conductive built up layer over said dielectric layer;   forming a contacting structure over said at least one conductive built up layer;   forming a protection layer over said at least one conductive built up layer;   exposing said micro lens area.   
     
     
         2 . The method of  claim 1 , further comprising forming a conductive bump coupled to said contacting structure. 
     
     
         3 . The method of  claim 1 , wherein said dielectric layer includes an elastic dielectric layer, a photosensitive layer, a silicone dielectric based material layer, a polyimides (PI) layer or a silicone resin layer. 
     
     
         4 . The method of  claim 3 , wherein said silicone dielectric based material comprises siloxane polymers (SINR), Dow Corning WL5000 series, or the combination thereof. 
     
     
         5 . The method of  claim 1 , wherein said at least one conductive built up layer comprises Ti/Cu/Au alloy or Ti/Cu/Ni/Au alloy. 
     
     
         6 . The method of  claim 1 , wherein the material of said substrate includes epoxy type FR5 or FR4. 
     
     
         7 . The method of  claim 1 , wherein the material of said substrate includes BT, silicon, PCB (print circuit board) material, glass or ceramic. 
     
     
         8 . The method of  claim 1 , wherein the material of said substrate includes alloy or metal. 
     
     
         9 . The method of  claim 1 , further includes a protection layer formed over said micro lens area of said die.