US2008265297A1PendingUtilityA1

CMOS image sensor and method for manufacturing the same

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Assignee: HAN CHANG HUNPriority: Dec 30, 2004Filed: Jul 2, 2008Published: Oct 30, 2008
Est. expiryDec 30, 2024(expired)· nominal 20-yr term from priority
Inventors:Chang Hun Han
H10F 39/18H10F 30/20H10F 39/014H10F 39/12
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Claims

Abstract

A CMOS image sensor and a method for manufacturing the same are disclosed, in which a blue photodiode is imparted with a greater thickness to improve sensitivity of blue light. The blue photodiode of a CMOS image sensor includes a first lightly doped P-type epitaxial layer formed on a heavily doped P-type semiconductor substrate; a gate electrode of a transfer transistor formed on the first epitaxial layer; a first N-type blue photodiode region formed on the first epitaxial layer; and a second N-type blue photodiode region formed on the first epitaxial layer corresponding to the first blue photodiode region.

Claims

exact text as granted — not AI-modified
1 . A CMOS image sensor, comprising:
 a semiconductor substrate;   a gate electrode formed on the semiconductor substrate;   a first blue photodiode region formed in the semiconductor substrate; and   a second blue photodiode region formed on the first blue photodiode region.   
   
   
       2 . A CMOS image sensor, comprising:
 a first lightly doped P-type epitaxial layer formed on a heavily doped P-type semiconductor substrate;   a gate electrode of a transfer transistor formed on the first epitaxial layer;   a first N-type blue photodiode region formed on the first epitaxial layer; and   a second N-type blue photodiode region formed on the first epitaxial layer corresponding to the first blue photodiode region.   
   
   
       3 - 8 . (canceled) 
   
   
       9 . The sensor as claimed in  claim 1 , wherein a thickness of the second blue photodiode region is 300 Å to 5000 Å. 
   
   
       10 . The sensor as claimed in  claim 2 , wherein a thickness of the second N-type blue photodiode region is 300 Å to 5000 Å. 
   
   
       11 . The sensor as claimed in  claim 2 , further comprising:
 a second N-type epitaxial layer formed on the first lightly doped P-type epitaxial layer including the first N-type blue photodiode region.   
   
   
       12 . The sensor as claimed in  claim 2 , further comprising:
 a dielectric formed on the first epitaxial layer including the first blue photodiode region.

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