Layer forming method using plasma discharge

Abstract

A layer forming method is disclosed which relies on reactive gas in a plasma state. The method includes steps of supplying power of not less than 1 W/cm 2 at a high frequency voltage exceeding 100 kHz across a gap between a first electrode and a second electrode opposed to each other at atmospheric pressure or at approximately atmospheric pressure to induce a discharge, generating a reactive gas in a plasma state by the charge, and exposing a substrate to the reactive gas in a plasma state to form a layer on the substrate.

1 . A layer forming method comprising the steps of:
 supplying power of not less than 1 W/cm2 at a high frequency voltage exceeding 100 kHz across a gap formed between a first electrode and at least one second electrode opposed to each other at approximately atmospheric pressure to induce a discharge, and thereby generating a reactive gas in a plasma state by the discharge; and   exposing a substrate to the reactive gas in a plasma state to form a layer on the substrate;   wherein the total power supplied between the first electrode and the second electrode or the second electrodes exceeds 15 kW.   
     
     
         2 . The method of  claim 1  wherein the total power supplied is not less than 30 kW. 
     
     
         3 . The method of  claim 1  wherein the total power supplied is not less than 50 kW. 
     
     
         4 . The method of  claim 1  wherein the total power supplied is not more than 300 kW. 
     
     
         5 . The method of  claim 1  wherein the power is supplied at not less than 1.2 W/cm 2  at a high frequency voltage not less than 200 kHz. 
     
     
         6 . The method of  claim 5  wherein the total power is not less than 50 kW and not more than 300 kW. 
     
     
         7 . The method of  claim 6  wherein the approximately atmospheric pressure is 93 kPa to 104 kPa. 
     
     
         8 . The method of  claim 5  wherein the high frequency voltage is not less than 800 kHz. 
     
     
         9 . The method of  claim 1  wherein the step of exporting the substrate to reactive gas forms a layer of 1 nm to 1000 nm. 
     
     
         10 . The method of  claim 1  wherein the total power is not less than 50 kW and not more than 300 kW. 
     
     
         11 . The method of  claim 1  wherein the approximately atmospheric pressure is 93 kPa to 104 kPa.