US2008268660A1PendingUtilityA1

Method of manufacturing semiconductor device

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Assignee: ITANI TAKAHARUPriority: Apr 25, 2007Filed: Apr 24, 2008Published: Oct 30, 2008
Est. expiryApr 25, 2027(~0.8 yrs left)· nominal 20-yr term from priority
Inventors:Takaharu ItaniKenichi YoshinoTakayuki ItoTakashi KawakamiTetsuya Kugimiya
H10P 72/0436H10P 34/422H10P 30/204H10P 30/21H10P 70/54H10D 30/0223H10P 30/28
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Claims

Abstract

A method of manufacturing a semiconductor device that involves a heat treatment of a semiconductor substrate, has removing a superficial layer from an upper surface of an edge part of said semiconductor substrate, a bevel surface of the edge part of said semiconductor substrate and a side surface of the edge part of said semiconductor substrate; and conducting the heat treatment of said semiconductor substrate by irradiating said semiconductor substrate with light having a pulse width of 0.1 milliseconds to 100 milliseconds from a light source after said superficial layer is removed.

Claims

exact text as granted — not AI-modified
1 . A method of manufacturing a semiconductor device that involves a heat treatment of a semiconductor substrate, comprising:
 removing a superficial layer from an upper surface of an edge part of said semiconductor substrate, a bevel surface of the edge part of said semiconductor substrate and a side surface of the edge part of said semiconductor substrate; and   conducting the heat treatment of said semiconductor substrate by irradiating said semiconductor substrate with light having a pulse width of 0.1 milliseconds to 100 milliseconds from a light source after said superficial layer is removed.   
   
   
       2 . The method of manufacturing a semiconductor device according to  claim 1 , wherein the thickness of said superficial layer removed falls within a range of 30 μm to 100 μm. 
   
   
       3 . The method of manufacturing a semiconductor device according to  claim 1 , wherein said superficial layer of the upper surface of said edge part is removed over a region extending 3 mm from a boundary between the upper surface and the bevel surface of said edge part of said semiconductor substrate. 
   
   
       4 . The method of manufacturing a semiconductor device according to  claim 2 , wherein said superficial layer of the upper surface of said edge part is removed over a region extending 3 mm from a boundary between the upper surface and the bevel surface of said edge part of said semiconductor substrate. 
   
   
       5 . The method of manufacturing a semiconductor device according to  claim 1 , wherein said light source is a xenon flash lamp or a laser having a wavelength of 500 nm to 11 μm. 
   
   
       6 . The method of manufacturing a semiconductor device according to  claim 2 , wherein said light source is a xenon flash lamp or a laser having a wavelength of 500 nm to 11 μm. 
   
   
       7 . The method of manufacturing a semiconductor device according to  claim 3 , wherein said light source is a xenon flash lamp or a laser having a wavelength of 500 nm to 11 μm. 
   
   
       8 . A method of manufacturing a semiconductor device that involves a heat treatment of a semiconductor substrate, comprising:
 conducting the heat treatment of said semiconductor substrate by irradiating said semiconductor substrate with light having a pulse width of 0.1 milliseconds to 100 milliseconds from a light source; and   removing a superficial layer from an upper surface of an edge part of said semiconductor substrate, a bevel surface of the edge part of said semiconductor substrate and a side surface of the edge part of said semiconductor substrate after the heat treatment of said semiconductor substrate is conducted.   
   
   
       9 . The method of manufacturing a semiconductor device according to  claim 8 , wherein the thickness of said superficial layer removed falls within a range of 30 μm to 100 μm. 
   
   
       10 . The method of manufacturing a semiconductor device according to  claim 8 , wherein said superficial layer of the upper surface of said edge part is removed over a region extending 3 mm from a boundary between the upper surface and the bevel surface of said edge part of said semiconductor substrate. 
   
   
       11 . The method of manufacturing a semiconductor device according to  claim 9 , wherein said superficial layer of the upper surface of said edge part is removed over a region extending 3 mm from a boundary between the upper surface and the bevel surface of said edge part of said semiconductor substrate. 
   
   
       12 . The method of manufacturing a semiconductor device according to  claim 8 , wherein said light source is a xenon flash lamp or a laser having a wavelength of 500 nm to 11 μm. 
   
   
       13 . The method of manufacturing a semiconductor device according to  claim 9 , wherein said light source is a xenon flash lamp or a laser having a wavelength of 500 nm to 11 μm. 
   
   
       14 . The method of manufacturing a semiconductor device according to  claim 10 , wherein said light source is a xenon flash lamp or a laser having a wavelength of 500 nm to 11 μm. 
   
   
       15 . A method of manufacturing a semiconductor device that involves a heat treatment of a semiconductor substrate, comprising:
 removing a superficial layer from a lower surface of an edge part of said semiconductor substrate and a lower bevel surface of the edge part of said semiconductor substrate; and   conducting the heat treatment of said semiconductor substrate by irradiating said semiconductor substrate with light having a pulse width of 0.1 milliseconds to 100 milliseconds from a light source after said superficial layer is removed.   
   
   
       16 . The method of manufacturing a semiconductor device according to  claim 15  wherein said light source is a xenon flash lamp or a laser having a wavelength of 500 nm to 11 μm.

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