Vertical Type Nanotube Semiconductor Device

Abstract

A vertical type nanotuhe semiconductor device including a nanotube bit line, disposed on a substrate and in parallel with the substrate and composed of a nanotube with a conductive property, and a nanotube pole connected to the bit line vertically to the substrate and provides a channel through which carriers migrate. By manufacturing the semiconductor device using the bit line composed of the nanotube, cutoff of an electrical connection of the bit line is prevented and an integration density of the semiconductor device can be improved.

1 .- 40 . (canceled) 
   
   
       41 . An integrated circuit device, comprising:
 a substrate; and   a field effect transistor having a nanotube channel region and a gate electrode surrounding the nanotube channel region, on said substrate.   
   
   
       42 . The device of  claim 41 , wherein the nanotube channel region comprises a material selected from a group consisting of C, ZnO, CdO, In2O3, MgO, Al 2 O 3 , AlN, InN, GaN, Si, AlP, InP, GaP, InAs, GaAs, AlAs, InSb, GaSb, ZnSe, ZnS, CdS, CdSe and BiSb. 
   
   
       43 . The device of  claim 42 , wherein the nanotube channel region is doped with a dopant selected from a group consisting of Mg, Zn, Cd, Ti, Li, Cu, Al, Ni, Y, Ag, Mn, V, Fe, La, Ta, Nb, Ga, In, S, Se, P, As, Co, Cr, B, N, Sb and H. 
   
   
       44 . The device of  claim 41 , wherein said field effect transistor further comprises a gate insulating layer extending between the gate electrode and the nanotube channel region. 
   
   
       45 . The device of  claim 44 , wherein the gate insulating layer is an oxide/nitride/oxide (ONO) layer. 
   
   
       46 . The device of  claim 41 , further comprising a capacitor having a nanotube electrode electrically connected to a current carrying terminal of said field effect transistor. 
   
   
       47 . The device of  claim 46 , wherein said capacitor comprises a capacitor dielectric layer covering the nanotube electrode. 
   
   
       48 . The device of  claim 41 , wherein the nanotube channel region has a longitudinal axis that extends orthogonal to a surface of said substrate. 
   
   
       49 . The device of  claim 41 , wherein said field effect transistor comprises a plurality of spaced-apart gate electrodes surrounding the nanotube channel region.