US2008279753A1PendingUtilityA1

Method and Apparatus for Growth of High Quality Carbon Single-Walled Nanotubes

48
Individually held — no corporate assignee on recordPriority: Jan 30, 2006Filed: Jan 30, 2007Published: Nov 13, 2008
Est. expiryJan 30, 2026(expired)· nominal 20-yr term from priority
Inventors:Avetik Harutyunyan
C01B 32/162B82Y 30/00C01B 2202/02B82Y 40/00
48
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Claims

Abstract

Method and processes for synthesizing single-wall carbon nanotubes is provided. A carbon precursor gas is contacted with metal catalysts deposited on a support material. The metal catalysts are preferably nanoparticles having diameters less than about 50 nm. The reaction temperature is selected such that it is near the eutectic point of the mixture of metal catalyst particles and carbon.

Claims

exact text as granted — not AI-modified
1 . A chemical vapor deposition method for the preparation of single-wall carbon: nanotubes (SWNT), the method comprising:
 contacting a carbon precursor gas with a catalyst on a support at a temperature less than the melting point of the catalyst and about 5° C. to about 150° C. above the eutectic point of the catalyst wherein SWNT are formed.   
     
     
         2 . The method of  claim 1 , wherein the carbon precursor gas is methane. 
     
     
         3 . The method of  claim 2 , wherein the carbon precursor gas further comprises an inert gas and hydrogen. 
     
     
         4 . The method of  claim 3 , wherein the inert gas is argon, helium, nitrogen, hydrogen, or combinations thereof. 
     
     
         5 . The method of  claim 1 , wherein the catalyst is iron, molybdenum, or combinations thereof. 
     
     
         6 . The method of  claim 1 , wherein the catalyst has a particle size between 1 nm to 10 nm. 
     
     
         7 . The method of  claim 6 , wherein the catalyst has a particle size of about 1 nm. 
     
     
         8 . The method of  claim 6 , wherein the catalyst has a particle size of about 3 nm. 
     
     
         9 . The method of  claim 6 , wherein the catalyst has a particle size of about 5 nm. 
     
     
         10 . The method of  claim 6 , wherein the support is a powdered oxide selected from the group consisting of Al 2 O 3 , SiO 3 , MgO and zeolites. 
     
     
         11 . The method of  claim 10 , wherein the powdered oxide is Al 2 O 3 . 
     
     
         12 . The method of  claim 1 , wherein the temperature is about 10° C. to about 100° C. above the eutectic point. 
     
     
         13 . The method of  claim 1 , wherein the temperature is about 50° C. above the eutectic point. 
     
     
         14 . The method of  claim 13 , wherein the temperature is about 80° C. above the eutectic point. 
     
     
         15 . The method of  claim 1 , wherein the SWNTs have a diameter of about 0.8 nm to about 2 nm. 
     
     
         16 . A single-wall carbon nanotube (SWNT) produced by the process of:
 contacting a carbon precursor gas with a catalyst on a support selected from the group consisting of Al 2 O 3 , SiO 3 , MgO and zeolite; and   maintaining reaction temperature between the melting point of the catalyst and the eutectic point of the catalyst.   
     
     
         17 . The process of  claim 16 , wherein the carbon precursor gas is methane. 
     
     
         18 . The process of  claim 17 , wherein the carbon precursor gas further comprises an inert gas and hydrogen. 
     
     
         19 . The process of  claim 18 , wherein the inert gas is argon, helium, nitrogen, hydrogen, or combinations thereof. 
     
     
         20 . The process of  claim 16 , wherein the catalyst is iron, molybdenum, or combinations thereof 
     
     
         21 . The process of  claim 16 , wherein the catalyst has a particle size between 1 nm to 10 nm. 
     
     
         22 . The process of  claim 16 , wherein the powdered oxide is Al 2 O 3 . 
     
     
         23 . The process of  claim 16 , wherein the catalyst and the support are in a ratio of about 1:1 to about 1:50. 
     
     
         24 . The process of  claim 16 , wherein the temperature is about 10° C. to about 100° C. above the eutectic point. 
     
     
         25 . The process of  claim 16 , wherein the temperature is about 50° C. above the eutectic point. 
     
     
         26 . The process of  claim 16 , wherein the temperature is about 80° C. above the eutectic point.

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