Method of Preparing Zinc Oxide Nanorods on a Substrate By Chemical Spray Pyrolysis

Abstract

A method of preparing nanostructured zinc oxide layers on a substrate by chemical spray pyrolysis at moderate deposition temperatures from 350° C. to 600° C. is disclosed. An aqueous or aqueous alcoholic solution comprising zinc chloride or zinc acetate as precursors is prepared and sprayed onto the preheated substrate so that the precursor reacts to form zinc oxide layer on the substrate. Thiourea or urea may be also added to the solution. Glass, silicon, or metal oxide covered glass can be used as the substrate.

1 - 25 . (canceled) 
     
     
         26 : Method of preparing nanostructured zinc oxide (ZnO) layers on a substrate, having a first surface and a second surface, the method comprising:
 heating the substrate to a predetermined temperature;   atomizing a solution, comprising a precursor, an additive, and a solvent, into small discrete droplets using spray technique, whereas said precursor is selected from the group of zinc chloride (ZnCl 2 ) and zinc acetate (Zn(CH 3 COO) 2 ) and said additive is selected from the group of thiourea (SC(NH 2 ) 2 ) and urea (OC(NH2)2); and   depositing the atomized solution on the first surface of the substrate, using predetermined solution feeding rate, whereas the solvent evaporates when reaching the substrate, and said precursor reacts to form the nanostructured zinc oxide layer.   
     
     
         27 : The method according to  claim 26 , wherein a precursor molar ratio ZnCl 2 :SC(NH 2 ) 2  in the solution is from about 1:1 to about 4:1. 
     
     
         28 : The method according to  claim 26 , wherein a precursor molar ratio ZnCl 2 :OC(NH 2 ) 2  in the solution is from about 1:1 to about 4:1. 
     
     
         29 : The method according to  claim 26 , wherein said solvent is selected from the group consisting of H 2 O, alcohols, and combinations thereof. 
     
     
         30 : The method according to  claim 29 , wherein said solvent comprises H 2 O and an alcohol, and a ratio of H 2 O and said alcohol is from about 1:1 to about 2:3 by volume. 
     
     
         31 : The method according to  claim 30 , wherein said alcohol is selected from the group consisting of propanol, isopropanol, ethanol, methanol, and combinations thereof. 
     
     
         32 : The method according to  claim 26 , wherein the concentration of zinc chloride is from about 0.01 moles per litre to about 0.4 moles per litre. 
     
     
         33 : The method according to  claim 26 , wherein the predetermined solution feeding rate is from about 1 ml/min to about 5 ml/min. 
     
     
         34 : The method according to  claim 26 , wherein the substrate is selected from a group consisting of glass, a metal oxide covered glass, Silicon and quartz. 
     
     
         35 : The method according to  claim 33 , wherein the metal oxide is selected from a group consisting of indium tin oxide, tin oxide, titanium oxide, and zinc oxide. 
     
     
         36 : The method according to  claim 26 , wherein the depositing is performed in an open system and air or compressed air is used as a carrier gas. 
     
     
         37 : The method according to  claim 35 , wherein a flow rate of said carrier gas is between about 5 l/min to about 9 l/min. 
     
     
         38 : The method according to  claim 26 , wherein nitrogen or argon is used as a carrier gas. 
     
     
         39 : The method according to  claim 26 , wherein the heating of said substrate is performed by bringing a heating element into contact with the second surface of the substrate, and the temperature of the first surface of the substrate is controlled indirectly by controlling the temperature of the heating element. 
     
     
         40 : The method according to  claim 39 , wherein soldered metal bath is used as said heating element, glass with a thickness of about 1 mm is used as said substrate, and a temperature of said soldered metal in said bath is from about 400° C. to about 650° C. 
     
     
         41 : The method according to  claim 26 , wherein said predetermined temperature of said first surface of said substrate is from about 350° C. to about 600° C. 
     
     
         42 : The method according to  claim 27 , wherein the predetermined temperature of said first surface of said substrate is from about 400° C. to about 600° C. 
     
     
         43 : The method according to  claim 27 , wherein the predetermined temperature of said first surface of said substrate is from about 400° C. to about 600° C. 
     
     
         44 : The method according to  claim 26 , wherein said solvent is H 2 O and wherein the concentration of zinc acetate is from about 0.1 moles per litre to about 0.4 moles per litre. 
     
     
         45 : The method according to  claim 26 , wherein said substrate is selected from the group consisting of Silicon and quartz and said predetermined temperature of said first surface of said substrate is from about 350° C. to about 650° C.