Magnetron sputtering target

Abstract

A magnetron sputtering target, which can improve utilization rate and service life of target materials and can be used in a magnetron sputtering technology, is provided. The magnetron sputtering target comprises a target material, a target back plate, an insulating pad, a target cathode frame, one or more leading pole piece adjustment pads, and one or more juxtaposed magnets, which are stacked in order. The leading pole piece adjustment pad is disposed between the insulating pad and the magnet.

1 . A plain magnetron sputtering target, comprising a target material, a target back plate, an insulating pad, a target cathode frame, one or more leading pole piece adjustment pads, and one or more juxtaposed magnets, which are stacked in order,
 wherein the leading pole piece adjustment pad is disposed between the insulating pad and the magnet.   
   
   
       2 . The plain magnetron sputtering target according to  claim 1 , wherein the leading pole piece adjustment pad is disposed between the target cathode frame and the magnet. 
   
   
       3 . The plain magnetron sputtering target according to  claim 1 , wherein the leading pole piece adjustment pad is fixed on an upper surface of the corresponding magnet. 
   
   
       4 . The plain magnetron sputtering target according to  claim 1 , wherein the leading pole piece adjustment pad is fixed on a surface of the target cathode frame opposite to the magnet. 
   
   
       5 . The plain magnetron sputtering target according to  claim 4 , wherein the leading pole piece adjustment pad is further fixed on an upper surface of the magnet. 
   
   
       6 . The plain magnetron sputtering target according to  claim 1 , wherein the leading pole piece adjustment pad is disposed between the insulating pad and the target cathode frame. 
   
   
       7 . The plain magnetron sputtering target according to  claim 6 , wherein the leading pole piece adjustment pad is fixed on a surface of the target cathode frame opposite to the insulating pad. 
   
   
       8 . The plain magnetron sputtering target according to  claim 6 , wherein the leading pole piece adjustment pad is fixed on a surface of the insulating pad opposite to the target cathode frame. 
   
   
       9 . The plain magnetron sputtering target according to  claim 8 , wherein a leading pole piece adjustment pad is further fixed on a surface of the target cathode frame opposite to the insulating pad. 
   
   
       10 . The plain magnetron sputtering target according to  claim 1 , wherein the leading pole piece adjustment pad is fixed on a surface of the target cathode frame opposite to the insulating pad. 
   
   
       11 . The plain magnetron sputtering target according to  claim 1 , wherein the leading pole piece adjustment pad is fixed on a surface of the insulating pad opposite to the target cathode frame. 
   
   
       12 . The plain magnetron sputtering target according to  claim 1 , further comprising a cathode mask shield that is provided on the target cathode frame and at least exposing a portion of the target material.