US2008283409A1PendingUtilityA1
Use of conjugated oligomer as additive for forming conductive polymers
Est. expiryMay 16, 2027(~0.8 yrs left)· nominal 20-yr term from priority
H01G 9/15H01G 9/0036
43
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Claims
Abstract
A process for forming a capacitor. The process includes providing an anode; providing a dielectric on the anode; exposing the anode to a polymer precursor solution comprising monomer, conjugated oligomer and optionally solvent and polymerizing the polymer precursor. The ratio between monomer and conjugated oligomer ranges from 99.9/0.1 to 75/25 by weight. The solvent content in the polymer precursor solution is from 0 to 99% by weight.
Claims
exact text as granted — not AI-modified1 . A process for forming a capacitor comprising:
providing an anode; providing a dielectric on said anode; exposing said anode comprising said dielectric to a solution of polymer precursor comprising 75-99.9 wt % monomer and 0.1 to 25 wt % conjugated oligomer; and polymerizing said polymer precursor.
2 . The process for forming a capacitor of claim 1 wherein said polymer precursor comprises 90-99.9 wt % monomer and 0.1 to 10 wt % conjugated oligomer.
3 . The process for forming a capacitor of claim 1 wherein said polymer precursor comprises 95-99.5 wt % monomer and 0.5 to 5 wt % conjugated oligomer.
4 . The process for forming a capacitor of claim 1 comprising exposing said anode comprising a dielectric to a solution comprising 1-100% by weight of said polymer precursor and 0-99% by weight solvent.
5 . The process for forming a capacitor of claim 4 comprising 10-90% by weight solvent.
6 . The process for forming a capacitor of claim 1 wherein said polymerizing said polymer precursor is by electrochemical polymerization.
7 . The process for forming a capacitor of claim 1 wherein said polymerizing said polymer precursor is by chemical polymerization.
8 . The process for forming a capacitor of claim 7 wherein said chemical polymerization is oxidative chemical polymerization.
9 . The process for forming a capacitor of claim 1 wherein said anode comprises a conductor.
10 . The process for forming a capacitor of claim 9 wherein said conductor comprises at least one material selected from niobium, aluminum, tantalum, titanium, zirconium, hafnium, tungsten and NbO.
11 . The process for forming a capacitor of claim 10 wherein said anode comprises at least one material selected from niobium, tantalum and NbO.
12 . The process for forming a capacitor of claim 1 wherein said monomer is:
wherein:
X is selected from S, Se and N;
R 1 and R 2 independently represent hydrogen, linear or branched C 1 -C 16 alkyl or C 1 -C 18 alkoxyalkyl; C 3 -C 8 cycloalkyl; phenyl or benzyl which are unsubstituted or substituted by C 1 -C 6 alkyl, C 1 -C 6 alkoxy, halogen or —OR 3 ; or R 1 and R 2 , taken together, are linear C 1 -C 6 alkylene which is unsubstituted or substituted by C 1 -C 6 alkyl, C 1 -C 6 alkoxy, halogen, C 3 -C 8 cycloalkyl, phenyl, benzyl, C 1 -C 4 alkylphenyl, C 1 -C 4 alkoxyphenyl, halophenyl, C 1 -C 4 alkylbenzyl, C 1 -C 4 alkoxybenzyl or halobenzyl, 5-, 6-, or 7-membered heterocyclic structure containing two oxygen elements; and
R 3 represents hydrogen, linear or branched C 1 -C 16 alkyl; C 1 -C 18 alkoxyalkyl; C 3 -C 8 cycloalkyl, phenyl; benzyl which are unsubstituted or substituted by C 1 -C 6 alkyl.
13 . The process for forming a capacitor of claim 12 wherein neither R 1 nor R 2 are hydrogen.
14 . The process for forming a capacitor of claim 12 wherein R 1 and R 2 independently of one another, represent —OCH 3 or —OCH 2 CH 3 .
15 . The process for forming a capacitor of claim 2 wherein R 1 and R 2 are taken together to represent —OCH 2 CH 2 O—.
16 . The process for forming a capacitor of claim 12 wherein X is selected from S and N.
17 . The process for forming a capacitor of claim 16 wherein X is S.
18 . A capacitor formed by the process of claim 1 .
19 . An electronic device comprising the capacitor of claim 18 .
20 . The process for forming a capacitor of claim 1 wherein said conjugated oligomer is:
wherein:
Y is independently selected from S, Se and N;
R 4 , R 5 , R 6 , R 7 , R 8 and R 9 independently represent hydrogen, linear or branched C 1 -C 16 alkyl or C 1 -C 18 alkoxyalkyl; C 3 -C 8 cycloalkyl, phenyl or benzyl which are unsubstituted or substituted by C 1 -C 6 alkyl, C 1 -C 6 alkoxy, halogen or —OR 3 ; or R 4 and R 5 , R 6 and R 7 or R 8 and R 9 , taken together, are linear C 1 -C 6 alkylene which is unsubstituted or substituted by C 1 -C 6 alkyl, C 1 -C 6 alkoxy, halogen, C 3 -C 8 cycloalkyl, phenyl, benzyl, C 1 -C 4 alkylphenyl, C 1 -C 4 alkoxyphenyl, halophenyl, C 1 -C 4 alkylbenzyl, C 1 -C 4 alkoxybenzyl or halobenzyl, 5-, 6-, or 7-membered heterocyclic structure containing two oxygen elements.
R 3 represents hydrogen, linear or branched C 1 -C 16 alkyl; C 1 -C 18 alkoxyalkyl; C 3 -C 8 cycloalkyl, phenyl; benzyl which are unsubstituted or substituted by C 1 -C 6 alkyl; and
n is an integer selected from 0-3.
21 . The process for forming a capacitor of claim 20 wherein none of R 4 , R 5 , R 6 , R 7 , R 8 and R 9 are hydrogen.
22 . The process for forming a capacitor of claim 20 wherein n is an integer selected from 0 and 1.
23 . The process for forming a capacitor of claim 20 wherein R 4 , R 5 , R 6 , R 7 , R 8 and R 9 ), independently of one another, represent —OCH 3 or —OCH 2 CH 3 .
24 . The process for forming a capacitor of claim 20 wherein at least one of R 4 and R 5 , R 6 and R 7 ; and R 8 and R 9 is taken together to represent —OCH 2 CH 2 O—.
25 . The process for forming a capacitor of claim 20 wherein at least one Y is selected from S and N.
26 . The process for forming a capacitor of claim 25 wherein at least one Y is S.
27 . A capacitor formed by the process of claim 20 .
28 . An electronic device comprising the capacitor of claim 27 .
29 . A capacitor formed by the process of:
providing an anode; providing a dielectric on said anode; exposing said anode comprising said dielectric to a solution comprising polymer precursor comprising 75-99.9 wt % monomer and 0.1 to 25 wt % conjugated oligomer; and polymerizing said polymer precursor.
30 . The capacitor of claim 29 wherein said polymer precursor comprises 90-99.9 wt % monomer and 0.1 to 10 wt % conjugated oligomer.
31 . The capacitor of claim 30 wherein said polymer precursor comprises 95-99.5 wt % monomer and 0.5 to 5 wt % conjugated oligomer.
32 . The capacitor of claim 29 wherein said anode comprises at least one material selected from niobium, aluminum, tantalum, titanium, zirconium, hafnium, tungsten and NbO.
33 . The capacitor of claim 32 wherein said anode comprises at least one material selected from niobium, tantalum and NbO.
34 . The capacitor of claim 29 comprising exposing said anode to a solution comprising 1-100% by weight of said polymer precursor and 0-99% by weight solvent.
35 . The capacitor of claim 34 comprising 10-90% by weight solvent.
36 . The process for forming a capacitor of claim 29 wherein said polymerizing said polymer precursor is by electrochemical polymerization.
37 . The process for forming a capacitor of claim 29 wherein said polymerizing said polymer precursor is by chemical polymerization.
38 . The process for forming a capacitor of claim 37 wherein said chemical polymerization is oxidative chemical polymerization.
39 . The capacitor of claim 29 wherein said monomer is:
wherein:
X is selected from S, Se and N;
R 1 and R 2 independently represent hydrogen, linear or branched C 1 -C 16 alkyl or C 1 -C 18 alkoxyalkyl; C 3 -C 8 cycloalkyl; phenyl or benzyl which are unsubstituted or substituted by C 1 -C 6 alkyl, C 1 -C 6 alkoxy, halogen or —OR 3 ; or R 1 and R 2 , taken together, are linear C 1 -C 6 alkylene which is unsubstituted or substituted by C 1 -C 6 alkyl, C 1 -C 6 alkoxy, halogen, C 3 -C 8 cycloalkyl, phenyl, benzyl, C 1 -C 4 alkylphenyl, C 1 -C 4 alkoxyphenyl, halophenyl, C 1 -C 4 alkylbenzyl, C 1 -C 4 alkoxybenzyl or halobenzyl, 5-, 6-, or 7-membered heterocyclic structure containing two oxygen elements; and
R 3 represents hydrogen, linear or branched C 1 -C 16 alkyl; C 1 -C 18 alkoxyalkyl; C 3 -C 8 cycloalkyl, phenyl; benzyl which are unsubstituted or substituted by C 1 -C 6 alkyl.
40 . The capacitor of claim 39 wherein neither R 1 nor R 2 are hydrogen.
41 . The capacitor of claim 39 wherein R 1 and R 2 independently of one another, represent —OCH 3 or —OCH 2 CH 3 .
42 . The capacitor of claim 39 wherein R 1 and R 2 are taken together to represent —OCH 2 CH 2 O—.
43 . The capacitor of claim 39 wherein X is selected from S and N.
44 . The capacitor of claim 43 wherein X is S.
45 . The process for forming a capacitor of claim 29 wherein said conjugated oligomer is:
wherein:
Y is independently selected from S, Se and N;
R 4 , R 5 , R 6 , R 7 , R 1 and R 9 independently represent hydrogen, linear or branched C 1 -C 16 alkyl or C 1 -C 18 alkoxyalkyl; C 3 -C 8 cycloalkyl, phenyl or benzyl which are unsubstituted or substituted by C 1 -C 6 alkyl, C 1 -C 6 alkoxy, halogen or —OR 3 ; or R 4 and R 5 , R 6 and R 7 or R 8 and R 9 , taken together, are linear C 1 -C 6 alkylene which is unsubstituted or substituted by C 1 -C 6 alkyl, C 1 -C 6 alkoxy, halogen, C 3 -C 8 cycloalkyl, phenyl, benzyl, C 1 -C 4 alkylphenyl, C 1 -C 4 alkoxyphenyl, halophenyl, C 1 -C 4 alkylbenzyl, C 1 -C 4 alkoxybenzyl or halobenzyl, 5-, 6-, or 7-membered heterocyclic structure containing two oxygen elements;
R 3 represents hydrogen, linear or branched C 1 -C 16 alkyl; C 1 -C 18 alkoxyalkyl; C 3 -C 8 cycloalkyl, phenyl; benzyl which are unsubstituted or substituted by C 1 -C 6 alkyl; and
n is an integer selected from 0-3.
46 . The process for forming a capacitor of claim 45 wherein none of R 4 , R 5 , R 6 , R 7 , R 8 and R 9 is hydrogen.
47 . The process for forming a capacitor of claim 45 wherein n is an integer selected From 0 and 1.
48 . The process for forming a capacitor of claim 45 wherein R 4 , R 5 , R 6 , R 7 , R 8 and R 9 , independently of one another, represent —OCH 3 or —OCH 2 CH 3 .
49 . The process for forming a capacitor of claim 45 wherein one of R 4 and R 5 , R 6 and R 7 or R 8 and R 9 is taken together to represent —OCH 2 CH 2 O—.
50 . The process for forming a capacitor of claim 45 wherein at least one Y is selected from S and N.
51 . The process for forming a capacitor of claim 50 wherein at least one Y is S.
52 . An electronic device comprising the capacitor of claim 45 .
53 . A process for forming a capacitor comprising:
providing an anode comprising a material selected from niobium, aluminum, tantalum, titanium, zirconium, hafnium, tungsten and NbO; providing a dielectric on said anode; exposing said anode comprising said dielectric to a polymer precursor comprising 75-99.9 wt % monomer defined as:
and 0.1 to 25 wt % conjugated oligomer defined as:
and
polymerizing said polymer precursor.
54 . The process for forming a capacitor of claim 53 wherein said polymer precursor comprises 90-99.9 wt % monomer and 0.1 to 10 wt % conjugated oligomer.
55 . The process for forming a capacitor of claim 53 wherein said polymer precursor comprises 95-99.5 wt % monomer and 0.5 to 5 wt % conjugated oligomer.
56 . The process for forming a capacitor of claim 53 comprising exposing said anode to a solution comprising 1-100% by weight of said polymer precursor and 0-99% by weight solvent.
57 . The process for forming a capacitor of claim 56 comprising 10-90% by weight solvent.
58 . The process for forming a capacitor of claim 53 wherein said anode comprises at least one material selected from niobium, aluminum, tantalum, titanium, zirconium, hafnium, tungsten and NbO.
59 . The process for forming a capacitor of claim 58 wherein said anode comprises at least one material selected from niobium, tantalum and NbO.
60 . The process for forming a capacitor of claim 53 wherein said polymerizing said polymer precursor is by electrochemical polymerization.
61 . The process for forming a capacitor of claim 53 wherein said polymerizing said polymer precursor is by chemical polymerization.
62 . The process for forming a capacitor of claim 53 wherein said chemical polymerization is oxidative chemical polymerization.Cited by (0)
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