Method for bonding electronic components

Abstract

A first electronic component, e.g., a semiconductor die and a second electronic component, e.g., a substrate, each with a main surface, are bonded to each other by applying at least one metal layer comprising an indium layer on each of the main surfaces. Then the semiconductor die and the substrate are aligned against each other with their main surfaces facing each other. The die and substrate with the metal layers in between form an arrangement, which is introduced into a compression means. Afterwards the arrangement is compressed in the compression means at a pressure in a range of 10 to 35 MPa, and heat in a range of 230 to 275° C. is applied to the arrangement, by which temperature and pressure the electronic components are bonded to each other. The compression process is performable in oxygeneous gas atmosphere inside the compression means.

1 . Method for bonding electronic components,
 in which a first electronic component, in particular a semiconductor die, and a second electronic component, in particular a substrate, are fixed to each other in a bonding process, each of the electronic components having a main surface, and the method comprising the following steps:   at least one metal layer comprising an indium layer is applied on each of the main surfaces of said electronic components;   the first and second electronic components are aligned against each other with their main surfaces facing each other, the first and the second electronic components together with the at least one metal layer in between forming an arrangement; and   the arrangement is introduced into a compression means, wherein   the arrangement is compressed at a pressure in a range of 10 to 35 MPa, wherein   the compression process is performable in oxygeneous gas atmosphere inside the compression means, and wherein   heat in a range of 230 to 275° C. is applied to the arrangement.   
     
     
         2 . Method according to  claim 1 , wherein
 the oxygeneous gas is air.   
     
     
         3 . Method according to  claim 1 , wherein
 the arrangement is compressed at a pressure in a range of 30 to 35 MPa and/or wherein the heat applied to the arrangement is in a range of 230 to 250° C.   
     
     
         4 . Method according to  claim 1 , wherein
 the heating process is performed for a period of 3 to 5 min.   
     
     
         5 . Method according to  claim 1 , wherein
 the at least one metal layer comprises a silver layer.   
     
     
         6 . Method according to  claim 1 , wherein
 the at least one metal layer is applied on the main surfaces of the electronic components by sputtering or evaporation.   
     
     
         7 . Method according to  claim 1 , wherein
 at least one of the electronic components is protected by an elastically deformable protection layer on the side opposite of the main surface of the at least one electronic component, in particular a protection layer comprising rubber, prior to being compressed.   
     
     
         8 . Method according to  claim 1 , wherein
 the compression means is a compression press, in particular a compression clamp or a compression chamber of an isostatic press.   
     
     
         9 . Method according to  claim 1 , wherein
 the arrangement is inserted into a preform, which comprises one or several means for alignment, and the relative positions of the first and second electronic components are predetermined by the one or several means for alignment.   
     
     
         10 . Method according to  claim 1 , wherein
 at least one of the electronic components comprises layers of silicon, metal, metallized ceramic composite material and/or a metal matrix material.   
     
     
         11 . Method according to  claim 2 , wherein
 the arrangement is compressed at a pressure in a range of 30 to 35 MPa and / or wherein the heat applied to the arrangement is in a range of 230 to 250° C.   
     
     
         12 . Method according to  claim 3 , wherein
 the heating process is performed for a period of 3 to 5 min.   
     
     
         13 . Method according to  claim 2 , wherein
 the at least one metal layer comprises a silver layer.   
     
     
         14 . Method according to  claim 5 , wherein
 the at least one metal layer is applied on the main surfaces of the electronic components by sputtering or evaporation.   
     
     
         15 . Method according to  claim 5 , wherein
 at least one of the electronic components is protected by an elastically deformable protection layer on the side opposite of the main surface of the at least one electronic component, in particular a protection layer comprising rubber, prior to being compressed.   
     
     
         16 . Method according to  claim 7 , wherein
 the compression means is a compression press, in particular a compression clamp or a compression chamber of an isostatic press.   
     
     
         17 . Method according to  claim 8 , wherein
 the arrangement is inserted into a preform, which comprises one or several means for alignment, and the relative positions of the first and second electronic components are predetermined by the one or several means for alignment.   
     
     
         18 . Method according to  claim 2 , wherein
 the heating process is performed for a period of 3 to 5 min.   
     
     
         19 . Method according to  claim 3 , wherein
 the at least one metal layer comprises a silver layer.