Patterning methods

Abstract

The invention includes a template comprising one or both of Cbs and CdSe adhered to a base in a desired pattern. The base can be any transparent or translucent material, and the desired pattern can include two or more separated segments. The template can be utilized for patterning a plurality of substrates. For instance, the substrates can be provided to have masking layers thereover, and the CdS and/or CdSe can be utilized as catalytic material to sequentially impart patterns in the masking layers. The imparting of the patterns can modify some regions of the masking layers relative to others, and either the modified or unmodified regions can be selectively removed to form patterned masks from the masking layers. Patterns from the patterned masks can then be transferred into the substrates.

1 - 30 . (canceled) 
     
     
         31 . A method comprising utilization of a template having patterned catalytic material corresponding to one or both of CdS and CdSe to modify some regions of a masking layer while leaving other regions unmodified. 
     
     
         32 . The method of  claim 31  wherein the masking layer is over a semiconductor substrate, wherein the modifying of some of the regions of the masking layer patterns the masking layer, and further comprising utilizing the patterned masking layer to pattern the semiconductor substrate. 
     
     
         33 . The method of  claim 31  wherein the masking layer is over one or more layers associated with a semiconductor substrate, wherein the modifying of some of the regions of the masking layer patterns the masking layer, and further comprising utilizing the patterned masking layer to pattern at least one of said one or more layers. 
     
     
         34 . A method of patterning a material, comprising:
 forming a masking layer over the material;   providing a template comprising patterned catalytic material, the catalytic material comprising one or both of CdS and CdSe;   utilizing the catalytic material to modify some regions of the masking layer while leaving other regions unmodified;   removing a portion of the masking layer while leaving another portion remaining over the material; the removed portion being one of the modified and unmodified regions, and the remaining portion being the other of the modified and unmodified regions; and   transferring a pattern from the remaining portion into the material.   
     
     
         35 . The method of  claim 34  wherein the material is a semiconductor material. 
     
     
         36 . The method of  claim 35  wherein the semiconductor material comprises silicon. 
     
     
         37 . The method of  claim 35  wherein the semiconductor material comprises monocrystalline silicon. 
     
     
         38 . The method of  claim 34  wherein the utilizing the catalytic material to modify some regions of the masking layer comprises utilizing the catalytic material during photocatalysis. 
     
     
         39 . A method of patterning a plurality of substrates, comprising:
 forming a template pattern comprising one or both of CdS and CdSe;   providing a plurality of substrates having masking layers thereover;   utilizing the template pattern to sequentially impart complementary patterns in the masking layers of the substrates; the imparting of the patterns comprising utilizing the template pattern to catalytically modify some regions of the masking layers while leaving other regions unmodified;   removing portions of the masking layers, while leaving other portions remaining; the removed portions being either the modified or unmodified regions of the masking layers, and the remaining portions being the other of the modified and unmodified regions of the masking layers; and   utilizing the remaining portions of the masking layers to pattern the substrates.   
     
     
         40 . The method of  claim 39  wherein the template pattern is supported by a quartz-containing base; and wherein the template pattern is adhered to the base with an adhesive. 
     
     
         41 . The method of  claim 39  wherein the template pattern is supported by a quartz-containing base; and wherein the template pattern comprises molecules retained within openings in the quartz of the quartz-containing base. 
     
     
         42 . The method of  claim 39  wherein the utilizing the template pattern to modify some regions of the masking layers while leaving other regions unmodified comprises utilization of photocatalysis. 
     
     
         43 . A method comprising electrostatically moving one or both of CdS and CdSe to regions of a base, and then fixing the one or both of the CdS and CdSe to the regions of the base to form a pattern across the base. 
     
     
         44 . The method of  claim 43  wherein the base consists of quartz. 
     
     
         45 . The method of  claim 44  wherein the fixing primarily utilizes van der Waals forces. 
     
     
         46 . The method of  claim 44  wherein the fixing utilizes an adhesive.