Process for Hydrosilylation

Abstract

Compounds containing unsaturated carbon-carbon bonds are hydrosilylated with H-silanes or H-siloxanes in the presence of a noble metal catalyst, wherein the water content of the reaction mixture is less than 500 ppm and the noble metal catalyst is supplied as a liquid, and is present in an amount of not more than 50 ppm.

1 .- 12 . (canceled) 
   
   
       13 . A process for hydrosilylating compounds (A) containing carbon-carbon double bonds or carbon-carbon triple bonds with organosilicon compounds (B) having silicon-bonded hydrogen by catalysis with a compound or complex of a noble metal of transition group VIII as a catalyst (C), comprising desiccating starting materials with a desiccant selected from the group consisting of calcium chloride, magnesium sulfate, sodium sulfate, metals, molecular sieves or H-free chlorosilanes, such that the water content of the reaction mixture is not more than 500 ppm and the catalyst is added in liquid form to the reaction mixture, with the proviso that the noble metal concentration is not more than 50 ppm based on the entire reaction composition. 
   
   
       14 . The process of  claim 13 , wherein the noble metal catalyst concentration is from 5 to 25 ppm based on the entire reaction composition. 
   
   
       15 . The process of  claim 13 , wherein the water content of the reaction mixture is not more than 100 ppm. 
   
   
       16 . The process of  claim 14 , wherein the water content of the reaction mixture is not more than 100 ppm. 
   
   
       17 . The process of  claim 13 , wherein the catalyst (C) comprises one or more compounds or complexes of a noble metal selected from the group consisting of platinum, ruthenium, iridium, rhodium and palladium. 
   
   
       18 . The process of  claim 13 , wherein the catalyst (C) used comprises at least one platinum-olefin complex or platinum-divinyltetramethyldisiloxane complex. 
   
   
       19 . The process of  claim 13 , wherein the process is carried out at a temperature of from 60 to 140° C. 
   
   
       20 . The process of  claim 13 , wherein the process is carried out at a pressure of from 1 to 20 bar. 
   
   
       21 . The process of  claim 13 , wherein organosilicon compounds with silicon-bonded hydrogen (B) comprise compounds containing units of the formula (II)
   R 2   c H d SiO (4-c-d)/2   (II)   
     where
 R 2  are identical or different monovalent radicals selected from the group consisting of —F, —Cl, —Br, —CN, —SCN, —NCO, alkoxy radicals, and SiC-bonded, substituted or unsubstituted hydrocarbon radicals optionally interrupted by oxygen atoms or a —C(O)— group, 
 c is 0, 1, 2 or 3 and d is 0, 1 or 2, 
 with the proviso that the sum of c+d is ≦ and at least one Si-bonded hydrogen atom per molecule is present. 
 
   
   
       22 . The process of  claim 13 , wherein organosilicon compounds having silicon-bonded hydrogen (B) comprise silanes of the formula (III)
   R 3   e H f Si  (III)   
     where
 R 3  are identical or different monovalent radicals selected from the group consisting of —F, —Cl, —Br, —CN, —SCN, —NCO, alkoxy radicals, and Si—C-bonded, substituted or unsubstituted hydrocarbon radicals optionally interrupted by oxygen atoms or the —C(O)— group, 
 e is 1, 2 or 3 and 
 f is 1, 2 or 3, 
 
     with the proviso that the sum of e+f=4. 
   
   
       23 . The process of  claim 13 , wherein the desiccant comprises silicon tetrachloride. 
   
   
       24 . A process for hydrosilylating compounds (A) containing carbon-carbon double bonds or carbon-carbon triple bonds with organosilicon compounds (B) having silicon-bonded hydrogen by catalysis with a compound or complex of a noble metal of transition group VIII as a catalyst (C), comprising desiccating starting materials (A) and/or (B), and desiccating the such that the water content of the reaction mixture is not more than 500 ppm and the catalyst is added in liquid form to the reaction mixture, with the proviso that the noble metal concentration is not more than 50 ppm based on the entire reaction composition.