Gallium Nitride Semiconductor and Method of Manufacturing the Same

Abstract

The present invention provides to a gallium nitride (GaN) semiconductor and a method of manufacturing the same, capable of reducing crystal defects caused by a difference in lattice parameters, and minimizing internal residual stress. In particular, since a high-quality GaN thin film is formed on a silicon wafer, manufacturing costs can be reduced by securing high-quality wafers with a large diameter at a low price, and applicability to a variety of devices and circuit can also be improved.

1 . A gallium nitride (GaN) semiconductor, comprising:
 a wafer having a defect layer formed in a predetermined region in the wafer; and   a GaN thin film formed on the wafer.   
     
     
         2 . The GaN semiconductor as claimed in  claim 1 , wherein the defect layer is formed by blasting the wafer with a high-pressure slurry containing SiO 2  particles. 
     
     
         3 . The GaN semiconductor as claimed in  claim 1  or  2 , wherein the predetermined region is within 1 to 4 μm from a top surface of the wafer. 
     
     
         4 . The GaN semiconductor as claimed in  claim 1  or  2 , wherein the wafer contains silicon. 
     
     
         5 . The GaN semiconductor as claimed in  claim 1  or  2 , further comprising a buffer layer formed between the wafer and the GaN thin film. 
     
     
         6 . The GaN semiconductor as claimed in  claim 4 , wherein the buffer layer comprises at least one material selected from the group consisting of AlN, GaN, ZnO, and MgO. 
     
     
         7 . A gallium nitride (GaN) semiconductor, comprising:
 a silicon wafer having a defect layer formed in predetermined region in the wafer; and   a GaN thin film formed on the wafer;   wherein the defect layer is formed by blasting the wafer with a high-pressure slurry containing SiO 2  particles.