Method for forming inductor on semiconductor substrate

Abstract

An inductor formed on a semiconductor substrate is provided in the present invention. The inductor includes a metal layer and an insulator layer. The metal layer constitutes the coil of the inductor. The insulator layer includes at least one insulator slot, and each insulator slot is encompassed in the metal layer.

1 . A method for forming an inductor on a semiconductor substrate, comprising:
 forming at least a metal layer on the semiconductor substrate; and   forming at least an insulator layer on the semiconductor substrate, wherein the at least metal layer constitutes the coil of the inductor, the at least insulator layer comprises at least one insulator slot, and each insulator slot is encompassed in one the metal layers.   
   
   
       2 . The method of  claim 1 , wherein the insulator slot is formed by using silicon oxide. 
   
   
       3 . The method of  claim 1 , wherein the at least insulator layer comprises a row of insulator slots arranged along the coil of the inductor. 
   
   
       4 . The method of  claim 1 , wherein the at least metal layer includes a plurality of metal layers. 
   
   
       5 . The method of  claim 4 , wherein the at least insulator layer comprises a plurality of insulator slots, and the insulator slots are distributed in each one of the metal layers. 
   
   
       6 . The method of  claim 4 , wherein each insulator slot is encompassed in the same one of the metal layers. 
   
   
       7 . The method of  claim 4 , wherein the metal layers are connected in parallel to constitute the coil of the inductor. 
   
   
       8 . The method of  claim 4 , wherein the metal layers are connected in series to constitute the coil of the inductor.